An efficient method for determining threshold voltage, series resistance and effective geometry of MOS transistors
- Auteur
- KARLSSON, P. R1 ; JEPPSON, K. O1
[1] Department of Solid-State Electronics, Chalmers University of Technology, 412 96 Göteborg, Sweden - Source
IEEE transactions on semiconductor manufacturing. 1996, Vol 9, Num 2, pp 215-222 ; ref : 13 ref
- ISSN
- 0894-6507
- Domaine scientifique
- Electronics
- Editeur
- Institute of Electrical and Electronics Engineers, New York, NY
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Caractéristique électrique Etude théorique Modélisation Résistance série Seuil tension Transistor MOS Transistor effet champ Extraction paramètre
- Mot clé (en)
- Electrical characteristic Theoretical study Modeling Series resistance Voltage threshold MOS transistor Field effect transistor Parameter extraction
- Mot clé (es)
- Característica eléctrica Estudio teórico Modelización Resistencia en serie Umbral tensión Transistor MOS Transistor efecto campo
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03F Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide / 001D03F04 Transistors
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 3100097
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/66.492815 
https://dx.doi.org/10.1109/66.492815
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