Influence of the liquid phase epitaxial growth conditions on composition profile for Hg1-xCdxTe film
- Author
- LI, B; CHU, J. H; CHEN, X. Q; CAO, J. Y; TANG, D. Y
Shanghai inst. technical physics, national lab. infrared physics, Shanghai 200083, China - Source
Journal of electronic materials. 1995, Vol 24, Num 8, pp 975-981 ; ref : 21 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Cadmium tellurure Composition chimique Composé ternaire Couche épitaxique Croissance cristalline Diagramme phase Distribution concentration Etude expérimentale LPE Matériau semiconducteur Mercure tellurure Profil profondeur Solution solide Ségrégation Cd Hg Te Hg1-xCdxTe Composé minéral Métal transition composé
- Keyword (en)
- Cadmium tellurides Chemical composition Ternary compounds Epitaxial layers Crystal growth Phase diagrams Concentration distribution Experimental study LPE Semiconductor materials Mercury tellurides Depth profiles Solid solutions Segregation Inorganic compounds Transition element compounds
- Keyword (es)
- Distribución concentración
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3612745
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02652970 
https://dx.doi.org/10.1007/BF02652970
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