Global excess spontaneous emission factor of semiconductor lasers with axially varying characteristics
- Auteur
- CHAMPAGNE, Y; MCCARTHY, N
Univ. Laval, cent. optique photonique laser, equipe laser optique guidée, Laval PQ G1K 7P4, Canada - Source
IEEE journal of quantum electronics. 1992, Vol 28, Num 1, pp 128-135 ; ref : 33 ref
- CODEN
- IEJQA7
- ISSN
- 0018-9197
- Domaine scientifique
- Electronics; Optics; Telecommunications
- Editeur
- Institute of Electrical and Electronics Engineers, New York, NY
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Emission spontanée Etude théorique Laser réaction répartie Laser semiconducteur
- Mot clé (en)
- Spontaneous emission Theoretical study Distributed feedback laser Semiconductor laser
- Mot clé (es)
- Emisión espontánea Estudio teórico Laser reacción repartida Laser semiconductor
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B40 Domaines classiques de la physique (y compris les applications) / 001B40B Optique / 001B40B55 Lasers / 001B40B55P Lasers à semiconducteur; diodes laser
- Discipline
- Physics : optics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 5258657
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Accès au Document
Installer sur votre navigateur
DOI
10.1109/3.119505 
https://dx.doi.org/10.1109/3.119505
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1109\/3.119505\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"Global excess spontaneous emission factor of semiconductor lasers with axially varying characteristics\";s:9:\"\u0000*\u0000jtitle\";s:35:\"IEEE journal of quantum electronics\";s:9:\"\u0000*\u0000stitle\";s:24:\"IEEE j. quantum electron\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"28\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"128\";s:8:\"\u0000*\u0000epage\";s:3:\"135\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9197\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"CHAMPAGNE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"Y\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"MCCARTHY, N\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEJQA7\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:102:\"Global excess spontaneous emission factor of semiconductor lasers with axially varying characteristics\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Panist
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1109\/3.119505\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"Global excess spontaneous emission factor of semiconductor lasers with axially varying characteristics\";s:9:\"\u0000*\u0000jtitle\";s:35:\"IEEE journal of quantum electronics\";s:9:\"\u0000*\u0000stitle\";s:24:\"IEEE j. quantum electron\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"28\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"128\";s:8:\"\u0000*\u0000epage\";s:3:\"135\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9197\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"CHAMPAGNE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"Y\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"MCCARTHY, N\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEJQA7\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:102:\"Global excess spontaneous emission factor of semiconductor lasers with axially varying characteristics\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Istex
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:16:\"10.1109\/3.119505\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Accès par Unpaywall
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1109\/3.119505\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"Global excess spontaneous emission factor of semiconductor lasers with axially varying characteristics\";s:9:\"\u0000*\u0000jtitle\";s:35:\"IEEE journal of quantum electronics\";s:9:\"\u0000*\u0000stitle\";s:24:\"IEEE j. quantum electron\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"28\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"128\";s:8:\"\u0000*\u0000epage\";s:3:\"135\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9197\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"CHAMPAGNE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"Y\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"MCCARTHY, N\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEJQA7\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:102:\"Global excess spontaneous emission factor of semiconductor lasers with axially varying characteristics\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Europe PubMed Central
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1109\/3.119505\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"Global excess spontaneous emission factor of semiconductor lasers with axially varying characteristics\";s:9:\"\u0000*\u0000jtitle\";s:35:\"IEEE journal of quantum electronics\";s:9:\"\u0000*\u0000stitle\";s:24:\"IEEE j. quantum electron\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"28\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"128\";s:8:\"\u0000*\u0000epage\";s:3:\"135\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9197\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"CHAMPAGNE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"Y\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"MCCARTHY, N\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEJQA7\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:102:\"Global excess spontaneous emission factor of semiconductor lasers with axially varying characteristics\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Base Search
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1109\/3.119505\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"Global excess spontaneous emission factor of semiconductor lasers with axially varying characteristics\";s:9:\"\u0000*\u0000jtitle\";s:35:\"IEEE journal of quantum electronics\";s:9:\"\u0000*\u0000stitle\";s:24:\"IEEE j. quantum electron\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"28\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"128\";s:8:\"\u0000*\u0000epage\";s:3:\"135\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9197\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"CHAMPAGNE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"Y\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"MCCARTHY, N\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEJQA7\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:102:\"Global excess spontaneous emission factor of semiconductor lasers with axially varying characteristics\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par arXiv
