Modeling and simulation of interconnection delays and crosstalks in high-speed integrated circuits
- Auteur
- GAO, D. S1 ; YANG, A. T; SUNG MO KANG
[1] Univ. Illinois, dep. electrical computer eng., Urbana IL 61801, United States - Source
IEEE transactions on circuits and systems. 1990, Vol 37, Num 1, pp 1-9 ; ref : 22 ref
- CODEN
- ICSYBT
- ISSN
- 0098-4094
- Domaine scientifique
- Electronics
- Editeur
- Institute of Electrical and Electronics Engineers, New York, NY
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Circuit intégré Conception Diaphonie Gallium Arséniure Ligne microbande Modélisation Retard Simulation ordinateur Transistor effet champ barrière Schottky
- Mot clé (en)
- Integrated circuit Design Crosstalk Gallium Arsenides Microstrip line Modeling Delay Computer simulation Metal semiconductor field effect transistor
- Mot clé (es)
- Circuito integrado Diseño Diafonía Galio Línea microbanda Modelización Retraso Simulación computadora Transistor efecto campo barrera Schottky
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03F Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide / 001D03F06 Circuits intégrés / 001D03F06A Conception. Technologies. Analyse fonctionnement. Essais
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 6761132
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/31.45685 
https://dx.doi.org/10.1109/31.45685
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