MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR TRANSISTORS.
- Auteur
- SLOTBOOM JW; DE GRAAFF HC
PHILIPS RES. LAB., EINDHOVEN, NETH. - Source
- SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 10; PP. 857-862; BIBL. 34 REF.
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- TRANSISTOR BANDE INTERDITE RETRECISSEMENT IMPURETE CONCENTRATION IMPURETE PROPRIETE ELECTRIQUE ANALYSE FONCTIONNEMENT ELECTROMAGNETISME ELECTRONIQUE
- Mot clé (en)
- TRANSISTOR ENERGY GAP NARROWING IMPURITIES IMPURITY DENSITY ELECTRICAL PROPERTIES OPERATION STUDY ELECTROMAGNETISM ELECTRONICS
- Mot clé (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- PASCAL7730165902
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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