ON THE ABSORPTION OF INFRARED RADIATION BY ELECTRONS IN SEMICONDUCTOR INVERSION LAYERS.
- Auteur
- ALLEN SJ JR; TSUI DC; VINTER B
BELL LAB., MURRAY HILL, N.J. 07974, U.S.A. - Source
- SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 20; NO 4; PP. 425-428; BIBL. 16 REF.
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- ABSORPTION IR INTERFACE SURFACE COUCHE INVERSION MATERIAU SEMICONDUCTEUR PHYSIQUE SOLIDE
- Mot clé (en)
- INFRARED ABSORPTION INTERFACES SURFACE INVERSION LAYER SOLID PHYSICS
- Mot clé (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B60 Etat condense: structure, proprietes mecaniques et thermiques
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- PASCAL7730222364
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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