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Gold Split-Ring Resonators (SRRs) as Substrates for Surface-Enhanced Raman ScatteringWEISHENG YUE; YANG YANG; ZHIHONG WANG et al.Journal of physical chemistry. C. 2013, Vol 117, Num 42, pp 21908-21915, issn 1932-7447, 8 p.Article

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Nanotextured and polytetrafluoroethylene-coated superhydrophobic surfaceDONGIN LEE; SEO, Sung-Bo; KIM, Dong-Young et al.Thin solid films. 2013, Vol 547, pp 111-115, issn 0040-6090, 5 p.Conference Paper

Performance of 12-μm- to 15-μm-Pitch MWIR and LWIR HgCdTe FPAs at Elevated TemperaturesSTRONG, Roger L; KINCH, Michael A; ARMSTRONG, John M et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3103-3107, issn 0361-5235, 5 p.Conference Paper

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Fabrication of boron doped diamond microband electrodes for electrochemical detection in a microfluidic channelFORSBERG, Pontus; JORGE, E. O; NYHOLM, Leif et al.Diamond and related materials. 2011, Vol 20, Num 8, pp 1121-1124, issn 0925-9635, 4 p.Article

Workshop on atomic and molecular collision data for plasma modelling: database needs for semiconductor plasma processing : THE 20TH EUROPEAN SECTIONAL CONFERENCE ON ATOMIC AND MOLECULAR PHYSICS OF IONIZED GASESMAKABE, Toshiaki; TATSUMI, Tetsuya.Plasma sources science & technology (Print). 2011, Vol 20, Num 2, issn 0963-0252, 024014.1-024014.6Article

A study on the etch characteristics of HfAlO₃ dielectric thin film in Cl₂/Ar gas chemistry using inductively coupled plasma systemWOO, Jong-Chang; HA, Tae-Kyung; UM, Doo-Seung et al.Thin solid films. 2011, Vol 520, Num 3, pp 1141-1146, issn 0040-6090, 6 p.Article

Estimation of Possible Mechanisms of Escherichia coli Inactivation by Plasma Treated Sodium Chloride SolutionOEHMIGEN, Katrin; WINTER, Jörn; HÄHNEL, Marcel et al.Plasma processes and polymers (Print). 2011, Vol 8, Num 10, pp 904-913, issn 1612-8850, 10 p.Article

The effects of gas flow rates on the etch characteristics of silicon nitride with an extreme ultra-violet resist pattern in CH₂F₂/N₂/Ar capacitively coupled plasmasKWON, B. S; LEE, J. H; LEE, N.-E et al.Thin solid films. 2011, Vol 519, Num 20, pp 6741-6745, issn 0040-6090, 5 p.Conference Paper

A Study of Plasma-Cleaned Ag-Plated Cu Leadframe SurfacesWUHU LI.Journal of electronic materials. 2010, Vol 39, Num 3, pp 295-302, issn 0361-5235, 8 p.Article

Characterization of Recessed-Gate AIGaN/GaN HEMTs as a Function of Etch DepthANDERSON, T. J; TADJER, M. J; MASTRO, M. A et al.Journal of electronic materials. 2010, Vol 39, Num 5, pp 478-481, issn 0361-5235, 4 p.Article

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Surface morphology and light scattering properties of plasma etched ZnO:B films grown by LP-MOCVD for silicon thin film solar cellsADDONIZIO, M. L; ANTONAIA, A.Thin solid films. 2010, Vol 518, Num 4, pp 1026-1031, issn 0040-6090, 6 p.Conference Paper

Locally enhanced discharges at gas hole outlets of a showerhead in a plasma etching reactorDENPOH, K.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 3, issn 0022-3727, 032003.1-032003.5Article

Oxygen plasma etching of silver-incorporated diamond-like carbon filmsMARCIANO, F. R; BONETTI, L. F; PESSOA, R. S et al.Thin solid films. 2009, Vol 517, Num 19, pp 5739-5742, issn 0040-6090, 4 p.Article

Plasmas froids radiofréquenceCHABERT, Pascal; RAIMBAULT, Jean-Luc.Images de la physique. 2009, pp 27-34, issn 0290-0041, 8 p.Article

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Characterization of neutral beam source using dc cold cathode discharge and its application processes : Neutral Beam ProcessesICHIKI, Katsunori; HATAKEYAMA, Masahiro.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 2, issn 0022-3727, 024003.1-024003.14Article

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Ion energy and angular distributions into the wafer-focus ring gap in capacitively coupled dischargesBABAEVA, Natalia Y; KUSHNER, Mark J.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 6, issn 0022-3727, 062004.1-062004.4Article

Role of reactive gas in atmospheric plasma for cell attachment and proliferation on biocompatible poly s-caprolactone filmLEE, Hyun-Uk; JEONG, Ye-Sul; JEONG, Se-Young et al.Applied surface science. 2008, Vol 254, Num 18, pp 5700-5705, issn 0169-4332, 6 p.Article

Etching characteristics of GaN by plasma chemical vaporization machiningNAKAHAMA, Yasuji; KANETSUKI, Norio; FUNAKI, Takeshi et al.Surface and interface analysis. 2008, Vol 40, Num 12, pp 1566-1570, issn 0142-2421, 5 p.Article

Inductively coupled plasma reactive ion etching of ZnO films in HBr/Ar plasmaSU RYUN MIN; HAN NA CHO; YUE LONG LI et al.Thin solid films. 2008, Vol 516, Num 11, pp 3521-3529, issn 0040-6090, 9 p.Conference Paper