Aging of plasma-activated copper and gold surfaces and its hydrophilic recovery after water immersionPRYSIAZHNYI, Vadym; SLAVICEK, Pavel; CERNAK, Mirko et al.Thin solid films. 2014, Vol 550, pp 373-380, issn 0040-6090, 8 p.Article

Work function tuning of tin-doped indium oxide electrodes with solution-processed lithium fluorideOW-YANG, C. W; JIA, J; AYTUN, T et al.Thin solid films. 2014, Vol 559, pp 58-63, issn 0040-6090, 6 p.Conference Paper

Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma depositionNAKAZAWA, Hideki; KAMATA, Ryosuke; MIURA, Soushi et al.Thin solid films. 2013, Vol 539, pp 134-138, issn 0040-6090, 5 p.Article

Low Temperature Deposition of Antibacterially Active Silicon Oxide Layers Containing Silver Nanoparticles, Prepared by Atmospheric Pressure Plasma Chemical Vapor DepositionBEIER, Oliver; PFUCH, Andreas; HORN, Kerstin et al.Plasma processes and polymers (Print). 2013, Vol 10, Num 1, pp 77-87, issn 1612-8850, 11 p.Article

Low temperature plasma assisted atomic layer deposition in nitrogen carrier gas studied by optical emission spectroscopyLEHTI, Sanna T.The European physical journal. D, Atomic, molecular and optical physics (Print). 2013, Vol 67, Num 4, issn 1434-6060, 82.1-82.10Article

Polarized Raman spectroscopy analysis of SiH_x bonds in nanocrystalline silicon thin filmsCHAIGNEAU, M; JOHNSON, E. V; KROELY, L et al.Thin solid films. 2013, Vol 537, pp 145-148, issn 0040-6090, 4 p.Article

Atmospheric-pressure plasma enhanced chemical deposition: role of the reactor flow dynamicsDESCAMPS, Pierre; SYED SALMAN ASAD; DE WILDE, Juray et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 36, issn 0022-3727, 365201.1-365201.13Article

PECVD of nanostructured SiO₂ in a modulated microwave plasma jet at atmospheric pressureHNILICA, J; SCHÄFER, J; FOEST, R et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 33, issn 0022-3727, 335202.1-335202.8Article

Pulsed high-power plasmas for deposition of nanostructured thin filmsAWAKOWICZ, Peter; CZARNETZKI, Uwe.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 8, issn 0022-3727, [147 p.]Serial Issue

Anatase and rutile TiO₂ films deposited by arc-free deep oscillation magnetron sputteringJIANLIANG LIN; BO WANG; SPROUL, William D et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 8, issn 0022-3727, 084008.1-084008.9Article

Multiple frequency capacitively coupled plasmas as a new technology for sputter processesBIENHOLZ, S; BIBINOV, N; AWAKOWICZ, P et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 8, issn 0022-3727, 084010.1-084010.8Article

Combined in situ FTIR-spectroscopic and electrochemical analysis of nanopores in ultra-thin SiO_x-Iike plasma polymer barrier filmsLIU, C.-N; OZKAYA, B; STEVES, S et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 8, issn 0022-3727, 084015.1-084015.8Article

Ion energy distribution functions behind the sheaths of magnetized and non-magnetized radio frequency dischargesTRIESCHMANN, Jan; SHIHAB, Mohammed; SZEREMLEY, Daniel et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 8, issn 0022-3727, 084016.1-084016.6Article

Simulations of electromagnetic effects in high-frequency capacitively coupled discharges using the Darwin approximationEREMIN, Denis; HEMKE, Torben; BRINKMANN, Ralf Peter et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 8, issn 0022-3727, 084017.1-084017.8Article

Control of surface wettability for inkjet printing by combining hydrophobic coating and plasma treatmentHEUNG YEOL PARK; BYUNG JU KANG; DOHYUNG LEE et al.Thin solid films. 2013, Vol 546, pp 162-166, issn 0040-6090, 5 p.Conference Paper

Effect of arc characteristics on the properties of large size diamond wafer prepared by DC arc plasma jet CVDLI, C. M; ZHU, R. H; GUO, H et al.Diamond and related materials. 2013, Vol 39, pp 47-52, issn 0925-9635, 6 p.Conference Paper

Effects of H₂ and Ar flow rates on the deposition of hydrogenated silicon thin films by an inductive coupled plasma-chemical vapor deposition systemCHUAN LI; HSIEH, J. H; HUANG, K. L et al.Thin solid films. 2013, Vol 544, pp 37-43, issn 0040-6090, 7 p.Conference Paper

Electron density measurements on an inductively coupled plasma with a one-port microwave interferometerANDRASCH, M; EHLBECK, J; FOEST, R et al.Plasma sources science & technology (Print). 2012, Vol 21, Num 5, issn 0963-0252, 055032.1-055032.7Article

Reactive expansion of laser-induced boron/carbon plasma in ECR nitrogen plasma during the deposition of BCN filmsSUN, J; FENG, H; GAN, J et al.Diamond and related materials. 2012, Vol 21, pp 66-72, issn 0925-9635, 7 p.Article

Silica nanofilms deposited by atmospheric pressure plasma liquid depositionMCCANN, Michael T. P; MOONEY, Damian A; DOWLING, Denis P et al.Thin solid films. 2012, Vol 520, Num 7, pp 2619-2626, issn 0040-6090, 8 p.Article

A possible explanation of the anomalous emissive probe behavior in a reactive RF plasmaKAR, R; BARVE, S. A; CHOPADE, S. S et al.Plasma sources science & technology (Print). 2012, Vol 21, Num 5, issn 0963-0252, 055009.1-055009.7Article

Removal of bisphenol A in water using an integrated granular activated carbon preconcentration and dielectric barrier discharge degradation treatmentSHOUFENG TANG; NA LU; JIE LIA et al.Thin solid films. 2012, Vol 521, pp 257-260, issn 0040-6090, 4 p.Conference Paper

Wear and corrosion behaviors of Ti6Al4V alloy biomedical materials by silver plasma immersion ion implantation processHONGXI LIU; QIAN XU; XIAOWEI ZHANG et al.Thin solid films. 2012, Vol 521, pp 89-93, issn 0040-6090, 5 p.Conference Paper

A compact ellipsoidal cavity type microwave plasma reactor for diamond film depositionLI, X. J; TANG, W. Z; WANG, F. Y et al.Diamond and related materials. 2011, Vol 20, Num 3, pp 374-379, issn 0925-9635, 6 p.Article

Ion energy distributions in bipolar pulsed-dc discharges of methane measured at the biased cathodeCORBELLA, C; RUBIO-ROY, M; BERTRAN, E et al.Plasma sources science & technology (Print). 2011, Vol 20, Num 1, issn 0963-0252, 015006.1-015006.8Article