First principles study of phosphorus and boron substitutional defects in Si-XIIMALONE, Brad D; COHEN, Marvin L.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 5, issn 0953-8984, 055505.1-055505.6Article

Na-doped optical Germanium bulk crystalsPEKAR, G. S; SINGAEVSKY, A. F.Applied physics. A, Materials science & processing (Print). 2012, Vol 108, Num 3, pp 657-664, issn 0947-8396, 8 p.Article

Out-diffusion of hydrogen from hydrogen plasma-processed oxygen-implanted siliconMISIUK, A; BAK-MISIUK, J; BARCZ, A et al.Applied surface science. 2012, Vol 260, pp 54-58, issn 0169-4332, 5 p.Conference Paper

Three carbon pairs in SiDOCAJ, A; ESTREICHER, S. K.Physica. B, Condensed matter. 2012, Vol 407, Num 15, pp 2981-2984, issn 0921-4526, 4 p.Conference Paper

Contamination of silicon by iron at temperatures below 800 °C : SOLAR CELLSMURPHY, J. D; FALSTER, R. J.Physica status solidi. Rapid research letters (Print). 2011, Vol 5, Num 10-11, pp 370-372, issn 1862-6254, 3 p.Article

Density functional calculations for manganese impurity in bulk silicon materialALZAHRANI, A. Z.Physica. B, Condensed matter. 2010, Vol 405, Num 19, pp 4195-4200, issn 0921-4526, 6 p.Article

Oxygen precipitation in heavily phosphorus-doped Czochralski silicon: effect of nitrogen codopingYUHENG ZENG; XIANGYANG MA; JIAHE CHEN et al.Semiconductor science and technology. 2009, Vol 24, Num 10, issn 0268-1242, 105030.1-105030.5Article

Ab initio calculation of intrinsic diffusion coefficients for boron in silicon at finite temperaturesMA, S.-Y; WANG, S.-Q.The European physical journal. B, Condensed matter physics (Print). 2009, Vol 72, Num 4, pp 567-573, issn 1434-6028, 7 p.Article

Er³⁺ Doping conditions of planar porous silicon waveguidesNAJAR, A; LORRAIN, N; AJLANI, H et al.Applied surface science. 2009, Vol 256, Num 3, pp 581-586, issn 0169-4332, 6 p.Article

Noise in boron doped amorphous/microcrystallization silicon filmsSHIBIN LI; ZHIMING WU; YADONG JIANG et al.Applied surface science. 2008, Vol 254, Num 11, pp 3274-3276, issn 0169-4332, 3 p.Article

The response of silicon detectors to low-energy ion implantationHOPF, T; YANG, C; ANDRESEN, S. E et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 41, issn 0953-8984, 415205.1-415205.7Article

Surface chemistry study of Mn-doped germanium nanowiresGROSSI, V; PARISSE, P; PASSACANTANDO, M et al.Applied surface science. 2008, Vol 254, Num 24, pp 8093-8097, issn 0169-4332, 5 p.Conference Paper

Raman and X-ray absorption near-edge structure characterization of GaN implanted with O, Ar, Xe, Te and AuKATSIKINI, M; ARVANITIDIS, J; PALOURA, E. C et al.Optical materials (Amsterdam). 2007, Vol 29, Num 12, pp 1856-1860, issn 0925-3467, 5 p.Article

⁵⁷Fe diffusion in n-type Si after GeV implantation of ⁵⁷MnYOSHIDA, Y; KOBAYASHI, Y; ASAHI, K et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 101-104, issn 0921-4526, 4 p.Conference Paper

Uniaxial compressive stress induced nuclear quadrupole interaction at the ¹¹¹Cd nucleus in n-doped siliconTESSEMA, Genene.Physica. B, Condensed matter. 2006, Vol 373, Num 1, pp 28-32, issn 0921-4526, 5 p.Article

Infrared analysis of the precipitated oxide phase in silicon and germaniumDE GRYSE, O; VANMEERBEEK, P; VANHELLEMONT, J et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 113-116, issn 0921-4526, 4 p.Conference Paper

Lattice location of ¹²B implanted in SiIZUMIKAWA, T; MATSUTA, K; SATO, K et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 193-195, issn 0921-4526, 3 p.Conference Paper

Contribution of dynamic charging effects into dopant contrast mechanisms in siliconCHAKK, Yuli; HORVITZ, Dror.Journal of materials science. 2006, Vol 41, Num 14, pp 4554-4560, issn 0022-2461, 7 p.Conference Paper

Infrared absorption measurement of carbon concentration in silicon crystalsINOUE, N; NAKATSU, M; AKHMETOV, V. D et al.Proceedings - Electrochemical Society. 2006, pp 461-470, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 10 p.Conference Paper

Defect-related light emission from processed He-implanted siliconBAK-MISIUK, J; MISIUK, A; ROMANOWSKI, P et al.Journal of luminescence. 2006, Vol 121, Num 2, pp 383-386, issn 0022-2313, 4 p.Conference Paper

Internal friction study of ion-implantation induced defects in siliconXIAO LIU; POHL, R. O; PHOTIADIS, D. M et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2006, Vol 442, Num 1-2, pp 63-66, issn 0921-5093, 4 p.Conference Paper

RF plasma processing of Er-doped TiO₂ luminescent nanoparticlesLI, Ji-Guang; WANG, Xiao-Hui; KAMIYAMA, Hiroshi et al.Thin solid films. 2006, Vol 506-07, pp 292-296, issn 0040-6090, 5 p.Conference Paper

Lattice sites of implanted Fe in SiWAHL, U; CORREIA, J. G; RITA, E et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 1, pp 014115.1-014115.8, issn 1098-0121Article

Study on the rapid thermal annealing process of low-energy arsenic and phosphorous ion-implanted silicon by reflective second harmonic generationLO, K. Y.Journal of physics. D, Applied physics (Print). 2005, Vol 38, Num 21, pp 3926-3933, issn 0022-3727, 8 p.Article

Characterization of Ge nanocrystals embedded in SiO₂ by Raman spectroscopySERINCAN, U; KARTOPU, G; GUENNES, A et al.Semiconductor science and technology. 2004, Vol 19, Num 2, pp 247-251, issn 0268-1242, 5 p.Article