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Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related AlloysDARAKCHIEVA, V; LORENZ, K; XIE, M.-Y et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 91-94, issn 1862-6300, 4 p.Article

2D-ACAR Studies on Swift Heavy Ion Si-Implanted GaAsSIVAJI, K; SELVAKUMAR, S.Physica. B, Condensed matter. 2012, Vol 407, Num 14S, pp 162-167, issn 0921-4526, 6 p.Conference Paper

Nitrogen doping in pulsed laser deposited ZnO thin films using dense plasma focusKARAMAT, S; RAWAT, R. S; TAN, T. L et al.Applied surface science. 2011, Vol 257, Num 6, pp 1979-1985, issn 0169-4332, 7 p.Article

Properties of Nitrogen Molecules in ZnONICKEL, N. H; GLUBA, M. A.Journal of electronic materials. 2011, Vol 40, Num 4, pp 440-445, issn 0361-5235, 6 p.Article

Comparison of implantation and diffusion behavior of Ti, Sb and N in ion-implanted single crystal and polycrystalline ZnO: A SIMS studyLEE, J; METSON, J; EVANS, P. J et al.Applied surface science. 2010, Vol 256, Num 7, pp 2143-2146, issn 0169-4332, 4 p.Article

Nitrogen incorporation into GaAs lattice as a result of the surface cavitation effectSAVKINA, R. K; SMIRNOV, A. B.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 42, issn 0022-3727, 425301.1-425301.6Article

Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial LayersYASTRUBCHAK, O; DOMAGALA, J. Z; SADOWSKI, J et al.Journal of electronic materials. 2010, Vol 39, Num 6, pp 794-798, issn 0361-5235, 5 p.Conference Paper

Solubility of Co clusters in Co-implanted ZnO thin films by 200 MeV Ag¹⁵⁺ ions irradiationWASI KHAN, M; KUMAR, Ravi; MAJEED KHAN, M. A et al.Semiconductor science and technology. 2009, Vol 24, Num 9, issn 0268-1242, 095011.1-095011.6Article

Structural and optical characterization of Eu-implanted GaNLORENZ, K; BARRADAS, N. P; ALVES, E et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 16, issn 0022-3727, 165103.1-165103.11Article

On diffusion of Cu in ZnOHERKLOTZ, F; LAVROV, E. V; WEBER, J et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4807-4809, issn 0921-4526, 3 p.Conference Paper

Structural distortions in nitrogen-doped GaP and GaAsPARFENOVA, I. I.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4984-4987, issn 0921-4526, 4 p.Conference Paper

Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnOMØLHOLT, T. E; MANTOVAN, R; NAIDOO, D et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4820-4822, issn 0921-4526, 3 p.Conference Paper

First-principles study of Ag-based p-type doping difficulty in ZnOQIXIN WAN; ZHIHUA XIONG; JIANGNAN DAI et al.Optical materials (Amsterdam). 2008, Vol 30, Num 6, pp 817-821, issn 0925-3467, 5 p.Article

Rare earth doping of III-nitride alloys by ion implantationLORENZ, K; ALVES, E; ROQAN, I. S et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 1, pp 34-37, issn 1862-6300, 4 p.Conference Paper

Comprehensive study of (Al)GaAs Si-doping using reflectance anisotropy spectroscopy in metal-organic vapour-phase epitaxyZORN, M; WEYERS, M.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 3, pp 878-882, issn 0022-3727, 5 p.Article

Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffractionBISOGNIN, G; DE SALVADOR, D; RUBINI, S et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 8, pp 2766-2771, issn 1862-6300, 6 p.Conference Paper

Inas-based p-n homojunction diodes : Doping effects and impact of doping on device parametersCHANGHYUN YI; KIM, Tong-Ho; BROWN, April S et al.Journal of electronic materials. 2006, Vol 35, Num 9, pp 1712-1714, issn 0361-5235, 3 p.Article

Influence of oxygen, hydrogen, helium, argon and vacuum on the surface behavior of molten InSb, other semiconductors, and metals on silicaKOTA, Arun K; ANAND, Gaurav; RAMAKRISHNAN, Suresh et al.Journal of crystal growth. 2006, Vol 290, Num 2, pp 319-333, issn 0022-0248, 15 p.Article

Self-assembling of 1O4Mg clusters in ZnTe doped with Mg and OELYUKHIN, Vyacheslav A; DIAZ ALBARRAN, Salvador F.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 35, Num 1, pp 33-37, issn 1386-9477, 5 p.Article

Combinatorial ion beam synthesis of CdS_xSe_1-x nanocrystalsHUBER, P; KARL, H; STRITZKER, B et al.Applied surface science. 2006, Vol 252, Num 7, pp 2497-2502, issn 0169-4332, 6 p.Conference Paper

Dopants and defects in InN and InGaN alloysWALUKIEWICZ, W; JONES, R. E; LI, S. X et al.Journal of crystal growth. 2006, Vol 288, Num 2, pp 278-282, issn 0022-0248, 5 p.Conference Paper

Hydrogen molecules and platelets in germaniumHOURAHINE, B; JONES, R; BRIDDON, P. R et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 105-108, issn 0921-4526, 4 p.Conference Paper

Oxygen-doped ZnTe phosphors for synchrotron X-ray imaging detectorsKANG, Z. T; MENKARA, H; WAGNER, B. K et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1262-1266, issn 0361-5235, 5 p.Conference Paper