Experimental investigation of electromigration failure in Cu―Sn―Cu micropads in 3D integrated circuitsZHIHONG HUANG; JONES, Robert E; JAIN, Ankur et al.Microelectronic engineering. 2014, Vol 122, pp 46-51, issn 0167-9317, 6 p.Article

Refinement of the Microstructure of Sn-Ag-Bi-In Solder, by Addition of SiC Nanoparticles, to Reduce Electromigration Damage Under High Electric Current : Pb-FREE SOLDERS AND MATERIALS FOR EMERGING INTERCONNECT AND PACKAGING TECHNOLOGIESYOUNGSEOK KIM; SHIJO NAGAO; SUGAHARA, Tohru et al.Journal of electronic materials. 2014, Vol 43, Num 12, pp 4428-4434, issn 0361-5235, 7 p.Article

Joule-Heating-Induced Damage in Cu-AI Wedge Bonds Under Current Stressing : PHASE STABILITY, PHASE TRANSFORMATIONS, AND REACTIVE PHASE FORMATION IN ELECTRONIC MATERIALSYANG, Tsung-Han; LIN, Yu-Min; OUYANG, Fan-Yi et al.Journal of electronic materials. 2014, Vol 43, Num 1, pp 270-276, issn 0361-5235, 7 p.Conference Paper

Effect of direct current stressing to Cu―Cu bond interface imperfection for three dimensional integrated circuitsMADE, Riko I; PENG LAN; HONG YU LI et al.Microelectronic engineering. 2013, Vol 106, pp 149-154, issn 0167-9317, 6 p.Conference Paper

Effectiveness of wafer level test for electromigration wear out reporting in advanced CMOS interconnects reliability assessmentBANA, F; PETITPREZ, E; NEY, D et al.Microelectronic engineering. 2013, Vol 106, pp 195-199, issn 0167-9317, 5 p.Conference Paper

A Sharp Interface Model of Intermediate-Phase Growth Under the Influence of ElectromigrationZHOU, Peng; JOHNSON, William C; LEO, Perry H et al.Journal of electronic materials. 2011, Vol 40, Num 9, pp 1876-1883, issn 0361-5235, 8 p.Article

Copper―dielectric cap interface with enhanced reliability for 45 nm technology and beyondHOHAGE, J; MAYER, U; LEHR, M. U et al.Microelectronic engineering. 2010, Vol 87, Num 11, pp 2119-2123, issn 0167-9317, 5 p.Article

Reliability of copper low-k interconnectsTOKEI, Zsolt; CROES, Kristof; BEYER, Gerald P et al.Microelectronic engineering. 2010, Vol 87, Num 3, pp 348-354, issn 0167-9317, 7 p.Conference Paper

Via wearout detection with on-chip monitorsAHMED, Fahad; MILOR, Linda.Microelectronics journal. 2010, Vol 41, Num 11, pp 789-800, issn 0959-8324, 12 p.Conference Paper

Effects of Electromigration on Interfacial Reactions in the Ni/Sn-Zn/Cu Solder InterconnectZHANG, X. F; GUO, J. D; SHANG, J. K et al.Journal of electronic materials. 2009, Vol 38, Num 3, pp 425-429, issn 0361-5235, 5 p.Article

Electromigration and potentiometry measurements of single-crystalline Ag nanowires under UHV conditionsKASPERS, M. R; BERNHART, A. M; MEYER ZU HERINGDORF, F.-J et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 26, issn 0953-8984, 265601.1-265601.6Article

First principles calculation of the effects of solute atom on electromigration resistance of Al interconnectsCHUN YU; XU JIJIN; YANG YANG et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 12, issn 0022-3727, 125501.1-125501.6Article

The cooperative effect of electromigration and non-equilibrium vacancies on reactive phase growthKORNIENKO, S. V; GUSAK, A. M.Philosophical magazine (2003. Print). 2009, Vol 89, Num 6, pp 525-534, issn 1478-6435, 10 p.Article

Thermomechanical Stress and Strain in Solder Joints During ElectromigrationZHANG, J. S; XI, H. J; WU, Y. P et al.Journal of electronic materials. 2009, Vol 38, Num 5, pp 678-684, issn 0361-5235, 7 p.Article

Effect of Electromigration on Interfacial Reactions in 90Sn-10Sb Pb-Free Solder JointsDU, X. N; GUO, J. D; SHANG, J. K et al.Journal of electronic materials. 2009, Vol 38, Num 11, pp 2398-2404, issn 0361-5235, 7 p.Article

Determination of Average Failure Time and Microstructural Analysis of Sn-Ag-Bi-In Solder Under ElectromigrationWU, Albert T; SUN, K. H.Journal of electronic materials. 2009, Vol 38, Num 12, pp 2780-2785, issn 0361-5235, 6 p.Conference Paper

Electromigration Behavior in Sn-37Pb and Sn-3.0Ag-0.5Cu Flip-Chip Solder Joints under High Current DensityHA, Sang-Su; KIM, Jong-Woong; YOON, Jeong-Won et al.Journal of electronic materials. 2009, Vol 38, Num 1, pp 70-77, issn 0361-5235, 8 p.Conference Paper

Investigation of Gold Nanoparticle Inks for Low-Temperature Lead-Free Packaging TechnologyBAKHISHEV, Teymur; SUBRAMANIAN, Vivek.Journal of electronic materials. 2009, Vol 38, Num 12, pp 2720-2725, issn 0361-5235, 6 p.Conference Paper

Is it possible to use external stress to tune silicon surface morphology?KARASHANOV, D; METOIS, J. J; LEROY, F et al.Materials science in semiconductor processing. 2009, Vol 12, Num 1-2, pp 12-15, issn 1369-8001, 4 p.Conference Paper

Temperature-Dependent Phase Segregation in Cu/42Sn-58Bi/Cu Reaction Couples under High Current DensityGUANGCHEN XU; HONGWEN HE; FU GUO et al.Journal of electronic materials. 2009, Vol 38, Num 2, pp 273-283, issn 0361-5235, 11 p.Conference Paper

Electromigration of Pb-free solder under a low level of current densityZHANG, J. S; CHAN, Y. C; WU, Y. P et al.Journal of alloys and compounds. 2008, Vol 458, Num 1-2, pp 492-499, issn 0925-8388, 8 p.Article

Improvement in Power Durability of Al Electrode Films Used in SAW Devices by Zr Additive and Ti UnderlayerDONGMEI LI; QIANG LI; PAN, F et al.Journal of electronic materials. 2008, Vol 37, Num 2, pp 180-184, issn 0361-5235, 5 p.Article

Local melting during electromigration in Cu conductor linesZHANG, H; WANG, G; CARGILL, G. S et al.Journal of electronic materials. 2007, Vol 36, Num 2, pp 117-122, issn 0361-5235, 6 p.Article

Relieving hot-spot temperature and current crowding effects during electromigration in solder bumps by using Cu columnsLIANG, S. W; CHANG, Y. W; CHEN, Chih et al.Journal of electronic materials. 2007, Vol 36, Num 10, pp 1348-1354, issn 0361-5235, 7 p.Article

Calibration of electromigration reliability of flip-chip packages by electrothermal coupling analysisLAI, Yi-Shao; KAO, Chin-Li.Journal of electronic materials. 2006, Vol 35, Num 5, pp 972-977, issn 0361-5235, 6 p.Article