Comparative mid- and far-infrared spectroscopy of nitrogen―oxygen complexes in siliconALT, H. Ch; WAGNER, H. E.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4549-4551, issn 0921-4526, 3 p.Conference Paper

Behavior of cold-worked AISI-304 steel in stress-corrosion cracking process: Microstructural aspectsZEMAN, A; NOVOTNY, R; UCA, O et al.Applied surface science. 2008, Vol 255, Num 1, pp 160-163, issn 0169-4332, 4 p.Article

Spectroscopic observation of the TDD0 in siliconMURIN, L. I; MARKEVICH, V. P; LINDSTRÖM, J. L et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 1046-1050, issn 0921-4526, 5 p.Conference Paper

The formation, dissociation and electrical activity of divacancy-oxygen complexes in SiCOUTINHO, J; JONES, R; ÖBERG, S et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 523-527, issn 0921-4526, 5 p.Conference Paper

Energetically favourable sites of iodine atoms in zirconium: an ab initio approachCARLOTT, G; DAVESNE, D.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 2002, Vol 82, Num 1, pp 73-83, issn 1364-2812Article

Two-detector Doppler broadening study of enhancement in AlMIJNARENDS, P. E; KRUSEMAN, A. C; VAN VEEN, A et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 46, pp 10383-10390, issn 0953-8984Conference Paper

Resonant mode in the modified Huesler alloy U_0.85Th_0.15NiSnGEORGE, A; NG, H. K; YUEN, T et al.Physica. B, Condensed matter. 1995, Vol 206-07, pp 482-484, issn 0921-4526Conference Paper

Self-trapped hydrogen states in metals determined from quantum mechanical calculations using potentials based on ab initio data. II: Hydrogen isotopes in FeKRIMMEL, H; SCHIMMELE, L; ELSÄSSER, C et al.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 38, pp 7705-7714, issn 0953-8984Article

Quantum chemical calculations on the buckminsterfullerene (C₆₀) systemENDREDI, G; LADIK, J.Journal of molecular structure. 1993, Vol 300, pp 405-413, issn 0022-2860Article

Theory of the electric-field gradient in dilute alloysPRAKASH, S; RATTAN, S. K; SINGH, J et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 10, pp 6927-6936, issn 0163-1829Article

The formation energy and bonding characteristics of small helium-vacancy clusters on the low-index surface of α-Fe by first principles calculationsJUN CAI; DAOGANG LU.Computational materials science. 2014, Vol 92, pp 387-394, issn 0927-0256, 8 p.Article

DLTS study of the oxygen dimer formation kinetics in siliconYARYKIN, Nikolai; WEBER, Jörg.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4576-4578, issn 0921-4526, 3 p.Conference Paper

Computational models of the single substitutional nitrogen atom in diamondLOMBARDI, E. B; MAINWOOD, Alison; OSUCH, K et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 19, pp 3135-3149, issn 0953-8984, 15 p.Article

Magnetic field effect on tunnel ionization of deep impurities by terahertz radiationGANICHEV, S. D; DANILOV, S. N; SOLLINGER, M et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 1155-1158, issn 0921-4526, 4 p.Conference Paper

Isotopic effects on vibrational modes of thermal double donors in Si and GeMURIN, L. I; LINDSTRÖM, J. L; MARKEVICH, V. P et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 290-293, issn 0921-4526Conference Paper

What we have learned about intrinsic defects in silicon : A help in understanding diamond?WATKINS, G. D.Physica status solidi. A. Applied research. 2001, Vol 186, Num 2, pp 167-176, issn 0031-8965Conference Paper

Modification of electronic states of bcc Cr due to local atomic displacements around interstitial atoms B, C and NMATSUMOTO, Y; MORINAGA, M; FURUI, M et al.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 3, pp 767-778, issn 0953-8984Article

Electronic structure of 3d transition metal solutes in liquid aluminiumTERZIEFFT, P; AUCHET, J.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 19, pp 4139-4145, issn 0953-8984Article

Electron structure and activation energy of hydrogen in α-Zr using nonlinear response theorySINGH, N; AVASTHI, D. K; TRIPATHI, A et al.Bulletin of materials science. 1997, Vol 20, Num 3, pp 349-358, issn 0250-4707Article

Parametrization of the screening charge density induced by a proton in a metalGERVASONI, J. L; ABRIATA, J. P; PONCE, V. H et al.Radiation effects and defects in solids. 1997, Vol 140, Num 2, pp 133-140, issn 1042-0150Article

Electronic structure calculation of Mg, Si, P, S, and Cl impurities in aluminiumTHIAGARAJAN, M; IYAKUTTI, K; PALANIYANDI, E et al.Physica status solidi. B. Basic research. 1994, Vol 183, Num 2, pp 505-511, issn 0370-1972Article

First-principles calculations for interstitial Fe impurities in hcp Sc, Y, Ti, and ZrFROTA-PESSOA, S; DE MELLO, L. A; PETRILLI, H. M et al.Physical review letters. 1993, Vol 71, Num 25, pp 4206-4209, issn 0031-9007Article

Trapping of interstitial defects: filling the gap between the experimental measurements and DFT calculationsLINGGANG ZHU; HAO WANG; HU, Qing-Miao et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 43, issn 0953-8984, 435402.1-435402.7Article

Electronic structure calculations of substitutional and interstitial hydrogen in NbKHOWASH, Pradeep; GOWTHAM, S; PANDEY, Ravindra et al.Solid state communications. 2012, Vol 152, Num 9, pp 788-790, issn 0038-1098, 3 p.Article

Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundaryXUEGONG YU; JINGGANG LU; ROZGONYI, George et al.Semiconductor science and technology. 2008, Vol 23, Num 12, issn 0268-1242, 125005.1-125005.5Article