First-principles study of the effect of Bi_Ga heteroantisites in GaAs:Bi alloyDECHUN LI; MING YANG; SHENGZHI ZHAO et al.Computational materials science. 2012, Vol 63, pp 178-181, issn 0927-0256, 4 p.Article

Intrinsic defects in GaAs and InGaAs through hybrid functional calculationsKOMSA, Hannu-Pekka; PASQUARELLO, Alfredo.Physica. B, Condensed matter. 2012, Vol 407, Num 15, pp 2833-2837, issn 0921-4526, 5 p.Conference Paper

Deep level defects in GaAs_1―xBi_x/GaAs heterostructuresZENAN JIANG; BEATON, D. A; LEWIS, R. B et al.Semiconductor science and technology. 2011, Vol 26, Num 5, issn 0268-1242, 055020.1-055020.7Article

Theoretical studies of low strain n-type GaN co-doped by Si and SnQINAN MAO; ZHENGUO JI; JUNHUA XI et al.Physica. B, Condensed matter. 2010, Vol 405, Num 1, pp 145-147, issn 0921-4526, 3 p.Article

Tunable Field Control Over the Binding Energy of Single Dopants by a Charged Vacancy in GaAsLEE, D. H; GUPTA, J. A.Science (Washington, D.C.). 2010, Vol 330, Num 6012, pp 1807-1810, issn 0036-8075, 4 p.Article

Determination of deep trapping center parameters in as-grown Tl₂Ga₂S₃Se layered crystalsYILDIRIM, Tacettin; GASANLY, Nizami M.Solid state sciences. 2009, Vol 11, Num 9, pp 1562-1566, issn 1293-2558, 5 p.Article

Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopyFLEISCHMAN, Z; MUNASINGHE, C; STECKL, A. J et al.Applied physics. B, Lasers and optics (Print). 2009, Vol 97, Num 3, pp 607-618, issn 0946-2171, 12 p.Article

Novel deep centers for high-performance optical materialsPAN, J. L; MCMANIS, J. E; GUPTA, M et al.Applied physics. A, Materials science & processing (Print). 2008, Vol 90, Num 1, pp 105-112, issn 0947-8396, 8 p.Article

Donor-like defects in ZnO substrate materials and ZnO thin films : ZnO and Related CompoundsVON WENCKSTERN, H; BRANDT, M; SCHMIDT, H et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 88, Num 1, pp 135-139, issn 0947-8396, 5 p.Article

Effect of localized B and N states on the magneto-transport of (B,Ga,In)As and (Ga,In)(N,As)TEUBERT, J; KLAR, P. J; HEIMBRODT, W et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 1, pp 431-436, issn 0370-1972, 6 p.Conference Paper

Influence of boron on the point defect equilibrium in highly n-doped gallium arsenide single crystalsKRETZER, U; BÖRNER, F; BÜNGER, T et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 246-249, issn 0921-4526, 4 p.Conference Paper

Manganese-hydrogen complex in GaPCLERJAUD, B; WASIK, D; BOUANANI-RAHBI, R et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 258-261, issn 0921-4526, 4 p.Conference Paper

Shallow and deep defects in Al_xGa_1-xN structuresSEGHIER, D; GISLASON, H. P.Physica. B, Condensed matter. 2007, Vol 401-02, pp 335-338, issn 0921-4526, 4 p.Conference Paper

Optically detected measurement of the ground-state population of an ensemble of neutral donors in GaAsALLEN, D. G; SHERWIN, M. S; STANLEY, C. R et al.Physical review B. Condensed matter and materials physics. 2006, Vol 72, Num 3, pp 035302.1-035302.5, issn 1098-0121Article

Dominant shallow acceptor enhanced by oxygen doping in GaNMONEMAR, B; PASKOV, P. P; TUOMISTO, F et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 440-443, issn 0921-4526, 4 p.Conference Paper

Defects related to N-sublattice damage in electron irradiated GaNYANG, Q; FEICK, H; WEBER, E. R et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 447-450, issn 0921-4526, 4 p.Conference Paper

Magnetospectroscopy to 30 T of donor states in InPLEWIS, R. A; SIMMONDS, P. E; WANG, Y.-J et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 622-625, issn 0921-4526, 4 p.Conference Paper

Density-functional tight-binding calculations of electronic states associated with grain boundaries in GaNBERE, A; RUTERANA, P; NOUET, G et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 12, pp 125211.1-125211.5, issn 1098-0121Article

Electron correlation effects on the hydrogen passivation of Mn_xGa_1-xAs dilute magnetic semiconductorsAMORE BONAPASTA, A; FILIPPONE, F; GIANNOZZI, P et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 12, pp 121202.1-121202.4, issn 1098-0121Article

Ground state splitting of ⁸S rare earth ions in semiconductorsLUSAKOWSKI, A.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 9, pp 094429.1-094429.8, issn 1098-0121Article

Modifications of EL2 related stable and metastable defects in semi-insulating GaAs by high energy light ion irradiationKABIRAJ, D; GHOSH, S.Semiconductor science and technology. 2005, Vol 20, Num 10, pp 1022-1026, issn 0268-1242, 5 p.Article

Energetics and self-compensation of Li in GaAsWANG, C; ZHANG, Q.-M.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 3, pp 035201.1-035201.6, issn 1098-0121Article

Spectra and energy levels of Gd³⁺(4f⁷) in AlNGRUBER, John B; VETTER, Ulrich; HOFSÄSS, Hans et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 19, pp 195202.1-195202.7, issn 1098-0121Article

Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlNVAIL, J. M; SCHINDEL, D; YANG, A et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 20, pp 3371-3378, issn 0953-8984, 8 p.Article

Optical characterization of radiative deep centres in 6H-SiC junction field effect transistorsPAVESI, M; MANFREDIL, M; RIGOLLI, P. L et al.Semiconductor science and technology. 2004, Vol 19, Num 1, pp 45-49, issn 0268-1242, 5 p.Article