Degenerate interface layers in epitaxial scandium-doped ZnO thin filmsLORENZ, Michael; SCHMIDT, Christian; BENNDORF, Gabriele et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 6, issn 0022-3727, 065311.1-065311.10Article

InN and ln_1―XGa_X N: calculation of hall mobilities and effects of alloy disorder and dislocation scatteringsAYDOGU, Senem; AKARSU, Mustafa; OZBAS, Omer et al.Materials science in semiconductor processing. 2012, Vol 15, Num 4, pp 347-352, issn 1369-8001, 6 p.Article

Fabrication of p-type ZnMgO films via pulsed laser deposition method by using Li as dopant sourceXINHUA PAN; ZHIZHEN YE; JIESHENG LI et al.Applied surface science. 2007, Vol 253, Num 14, pp 6060-6062, issn 0169-4332, 3 p.Article

Influence of magnetic clusters on electrical and magnetic properties of In_1-xMn_xSb/GaAs dilute magnetic semiconductor grown by liquid phase epitaxyGANESAN, K; MARIYAPPAN, S; BHAT, H. L et al.Solid state communications. 2007, Vol 143, Num 4-5, pp 272-275, issn 0038-1098, 4 p.Article

Structural and physical properties of Mg_3-xZn_xSb₂ (x = 0-1.34)AHMADPOUR, Faraz; KOLODIAZHNYI, Taras; MOZHARIVSKYJ, Yurij et al.Journal of solid state chemistry (Print). 2007, Vol 180, Num 9, pp 2420-2428, issn 0022-4596, 9 p.Article

Electrical properties of undoped bulk ZnO substratesPOLYAKOV, A. Y; SMIRNOV, N. B; GOVORKOV, A. V et al.Journal of electronic materials. 2006, Vol 35, Num 4, pp 663-669, issn 0361-5235, 7 p.Article

Thermal conductivity of isotopically enriched 71GaAs crystalINYUSHKIN, A. V; TALDENKOV, A. N; YAKUBOVSKY, A. Yu et al.Semiconductor science and technology. 2003, Vol 18, Num 7, pp 685-688, issn 0268-1242, 4 p.Article

Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser depositionAGURA, Hideaki; SUZUKI, Akio; MATSUSHITA, Tatsuhiko et al.Thin solid films. 2003, Vol 445, Num 2, pp 263-267, issn 0040-6090, 5 p.Conference Paper

Thermoactivated conductivity in p-GaAs/Al0.5Ga0.5As below 5 k under combined influence of illumination and uniaxial stressKRAAK, W; MININA, N. Ya; ILIEVSKY, A. A et al.Physica status solidi. B. Basic research. 2003, Vol 235, Num 2, pp 390-395, issn 0370-1972, 6 p.Conference Paper

An analytical approach to the modelling of intrinsic base sheet resistance in a SiGe hbt and optimal profile design considerations for its minimizationBISWAS, Abhijit; BASU, P. K.Semiconductor science and technology. 2002, Vol 17, Num 12, pp 1249-1254, issn 0268-1242, 6 p.Article

Electrical compensation in GaAs crystals grown by HPLEC techniqueDURAI, L; RAMAN, R; INDERPAL et al.SPIE proceedings series. 2002, pp 1038-1040, isbn 0-8194-4500-2, 2VolConference Paper

Pnp AlGaN/GaN heterojunction bipolar transistors operating at 300°CKUMAKURA, K; MAKIMOTO, T; KOBAYASHI, N et al.Physica status solidi. A. Applied research. 2002, Vol 194, Num 2, pp 443-446, issn 0031-8965, 4 p.Conference Paper

Study of ion beam milling effect on some electrical properties of HgCdTeMITTAL, Vandna; GUPTA, Indu; SHARMA, R. K et al.SPIE proceedings series. 2002, pp 1125-1128, isbn 0-8194-4500-2, 2VolConference Paper

The link between gallium vacancies and plasma damage to n-type GaNCHOI, H. W; CHUA, S. J.Physica status solidi. A. Applied research. 2001, Vol 188, Num 1, pp 393-397, issn 0031-8965Conference Paper

Effect of Sn content on the electrical properties and thermal conductivity of Pb_1-xSn_xTeORIHASHI, Masaki; NODA, Yasutoshi; LIDONG CHEN et al.Materials transactions - JIM. 2000, Vol 41, Num 9, pp 1196-1201, issn 0916-1821Article

Quantitative topographic assessment of Cu incorporation in GaAsBAEUMLER, M; STIBAL, R; STOLZ, W et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 207-211, issn 0022-0248Conference Paper

Reversible conductivity control and quantitative identification of compensating defects in ZnSe bulk crystalsPROKESCH, M; IRMSCHER, K; GEBAUER, J et al.Journal of crystal growth. 2000, Vol 214-15, pp 988-992, issn 0022-0248Conference Paper

Latest developments in vertical gradient freeze (VGF) technology : GaAs, InP, and GaPYOUNG, M; LIU, X; ZHANG, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 66, Num 1-3, pp 1-6, issn 0921-5107Conference Paper

Growth of zinc selenide single crystal by the modified Piper and Polich sublimation methodLEE, H; KIM, T. S; JEONG, T. S et al.Journal of crystal growth. 1998, Vol 191, Num 1-2, pp 59-64, issn 0022-0248Article

Effect of temperature and pressure on the electrical resistivity in Tin monoselenide crystalsAGARWAL, A.SPIE proceedings series. 1998, pp 1140-1144, isbn 0-8194-2756-X, 2VolConference Paper

Electrical and luminescence properties of (CdZn)Te single crystals prepared by the vertical gradient freezing methodHÖSCHL, P; IVANOV, Yu. M; BELAS, E et al.Journal of crystal growth. 1998, Vol 184-85, pp 1039-1043, issn 0022-0248Conference Paper

Heavily doped p-type ZnSe layer formation by excimer laser dopingHATANAKA, Y; AOKI, T; ARAKAWA, T et al.Journal of crystal growth. 1998, Vol 184-85, pp 425-428, issn 0022-0248Conference Paper

Formation of highly conductive p-type ZnSe using Li₃N diffusionHONDA, T; LIM, S. W; YANASHIMA, K et al.Japanese journal of applied physics. 1996, Vol 35, Num 7, pp 3878-3879, issn 0021-4922, 1Article

On the high pressure structural phase transition and the chemical bonding in III-V compoundsZAOUI, A; CERTIER, M; FERHAT, M et al.Solid state communications. 1996, Vol 99, Num 9, pp 659-664, issn 0038-1098Article

P-type conducting ZnSe and ZnSSe by N₂-gas doping during molecular beam epitaxyHISHIDA, Y; YOSHIE, T; YAGI, K et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1415-1419, issn 0021-4922, 1Conference Paper