A new route for the synthesis of graphene oxide-Fe₃O₄ (GO-Fe₃O₄) nanocomposites and their Schottky diode applicationsMETIN, Önder; AYDOGAN, Sakir; MERAL, Kadem et al.Journal of alloys and compounds. 2014, Vol 585, pp 681-688, issn 0925-8388, 8 p.Article

More precise determination of work function based on Fermi―Dirac distribution and Fowler formulaLIU CHANGSHI.Physica. B, Condensed matter. 2014, Vol 444, pp 44-48, issn 0921-4526, 5 p.Article

Ni/SiC-6H Schottky Barrier Diode interfacial states characterization related to temperatureBENAMARA, Mekki; ANANI, Macho; AKKAL, Boudali et al.Journal of alloys and compounds. 2014, Vol 603, pp 197-201, issn 0925-8388, 5 p.Article

Direct Determination of Energy Band Alignments of Ni/Al₂O₃/GaN MOS Structures Using Internal Photoemission SpectroscopyZENG ZHANG; JACKSON, Christine M; AREHART, Aaron R et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 828-832, issn 0361-5235, 5 p.Conference Paper

Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structureBIREL, Ozgul; KAVASOGLU, Nese; SERTAP KAVASOGLU, A et al.Physica. B, Condensed matter. 2013, Vol 412, pp 64-69, issn 0921-4526, 6 p.Article

Origins of Effective Work Function Roll-Off Behavior for High-κ Last Replacement Metal Gate StacksANDO, Takashi; CARTIER, Eduard A; BRULEY, John et al.IEEE electron device letters. 2013, Vol 34, Num 6, pp 729-731, issn 0741-3106, 3 p.Article

A New Impregnated Dispenser CathodeSHENGYIN YIN; ZHAOCHUAN ZHANG; ZHEN PENG et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 12, pp 4258-4262, issn 0018-9383, 5 p.Article

Chemical Oxide Interfacial Layer for the High-k-Last/Gate-Last Integration SchemeCHEN, Ying-Tsung; FU, Ssu-I; CHIANG, Wen-Tai et al.IEEE electron device letters. 2012, Vol 33, Num 7, pp 946-948, issn 0741-3106, 3 p.Article

Direct Measurements of Lateral Variations of Schottky Barrier Height Across End-On Metal Contacts to Vertical Si Nanowires by Ballistic Electron Emission MicroscopyWEI CAI; YULU CHE; PELZ, Jonathan P et al.Nano letters (Print). 2012, Vol 12, Num 2, pp 694-698, issn 1530-6984, 5 p.Article

Electrical characterisation of ruthenium Schottky contacts on n-Ge (1 0 0)CHAWANDA, Albert; NYAMHERE, Cloud; AURET, Francois D et al.Physica. B, Condensed matter. 2012, Vol 407, Num 10, pp 1570-1573, issn 0921-4526, 4 p.Conference Paper

Controlled modification of Schottky barrier height by partisan interlayerYANG LI; WEI LONG; TUNG, Raymond T et al.Solid state communications. 2011, Vol 151, Num 22, pp 1641-1644, issn 0038-1098, 4 p.Article

Effects of post-annealing on Schottky contacts of Pt/ZnO films toward UV photodetectorLI, Y. Z; LI, X. M; GAO, X. D et al.Journal of alloys and compounds. 2011, Vol 509, Num 26, pp 7193-7197, issn 0925-8388, 5 p.Article

Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodesSCHRAMM, A; POLOJÄRVI, V; HAKKARAINEN, T. V et al.Semiconductor science and technology. 2011, Vol 26, Num 5, issn 0268-1242, 055017.1-055017.4Article

Fabrication and electrical characterization of pyrrole―aniline copolymer-based Schottky diodesSÖNMEZOGLU, S; DURMUS, C. B; TAS, R et al.Semiconductor science and technology. 2011, Vol 26, Num 5, issn 0268-1242, 055011.1-055011.6Article

Physical properties of Co/n-Ge Schottky contactsLAJAUNIE, L; DAVID, M. L; BARBOT, J. F et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 12, issn 0022-3727, 125103.1-125103.9Article

Surface dipole of F4TCNQ films: Collective charge transfer and dipole-dipole repulsion in submonolayersSOOS, Zoltán G; TOPHAM, Benjamin J.Organic electronics (Print). 2011, Vol 12, Num 1, pp 39-44, issn 1566-1199, 6 p.Article

Oxide insertion layer in organic semiconductor devicesIRFAN; HUANJUN DING; SO, Franky et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7777, issn 0277-786X, isbn 9780819482730, 1Vol, 011105.1-011105.14Conference Paper

Formation of Schottky-type metal/SrTiO₃ junctions and their resistive propertiesSTÖCKER, Hartmut; ZSCHORNAK, Matthias; SEIBT, Juliane et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 100, Num 2, pp 437-445, issn 0947-8396, 9 p.Article

Analysis of temperature dependent I―V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constantMTANGI, W; AURET, F. D; NYAMHERE, C et al.Physica. B, Condensed matter. 2009, Vol 404, Num 8-11, pp 1092-1096, issn 0921-4526, 5 p.Article

Analysis of the current-voltage characteristics of the Pd/Au Schottky structure on n-type GaN in a wide temperature rangeRAVINANDAN, M; KOTESWARA RAO, P; RAJAGOPAL REDDY, V et al.Semiconductor science and technology. 2009, Vol 24, Num 3, issn 0268-1242, 035004.1-035004.7Article

Current-voltage and capacitance-voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diodeOCAK, Y. S; KULAKCI, M; KILICOGLU, T et al.Synthetic metals. 2009, Vol 159, Num 15-16, pp 1603-1607, issn 0379-6779, 5 p.Article

Direct and indirect contact effect between Al and TiO₂ on the conduction mechanism for polymer-TiO₂ Schottky diodesYOO, K. H; KANG, K. S; CHEN, Y et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 7, issn 0022-3727, 075107.1-075107.4Article

Fabrication and electrical characterization of Schottky diode based on 2-amino-4, 5-imidazoledicarbonitrile (AIDCN)GUPTA, R. K; GHOSH, K; KAHOL, P. K et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 10, pp 1832-1834, issn 1386-9477, 3 p.Article

GaN Schottky barrier photodiode on Si (111) with low-temperature-grown cap layerCHUAH, L. S; HASSAN, Z; ABU HASSAN, H et al.Journal of alloys and compounds. 2009, Vol 481, Num 1-2, issn 0925-8388, L15-L19Article

Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In_0.2Ga_0.8As wellsARPATZANIS, N; HASTAS, N. A; DIMITRIADIS, C. A et al.Physica status solidi. B. Basic research. 2009, Vol 246, Num 4, pp 880-884, issn 0370-1972, 5 p.Article