Effect of nitrogen containing plasma on interface properties of sputtered ZrO₂ thin films on siliconRAO, Ashwath; DWIVEDI, Anshuman; GOSWAMI, Manish et al.Materials science in semiconductor processing. 2014, Vol 19, pp 145-149, issn 1369-8001, 5 p.Article

Physical and electrical characteristics of metal/Dy₂O₃/p-GaAs structureSAGHROUNI, H; JOMNI, S; BELGACEM, W et al.Physica. B, Condensed matter. 2014, Vol 444, pp 58-64, issn 0921-4526, 7 p.Article

A novel high voltage lateral double diffused metal oxide semiconductor (LDMOS) device with a U-shaped buried oxide featureMEHRAD, Mahsa; OROUJI, Ali A.Materials science in semiconductor processing. 2013, Vol 16, Num 6, pp 1977-1981, issn 1369-8001, 5 p.Article

Characterization of SiON/InP MOS structure with sulfidation, fluorination, and hydrogenationLEE, Ming-Kwei; YEN, Chih-Feng; CHENG, Chi-Hsuan et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 112, Num 4, pp 1057-1062, issn 0947-8396, 6 p.Article

Electrically pumped ultraviolet lasing from ZnO in metal-insulator-semi devicesKEWEI WU; PING DING; YANGFAN LU et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 111, Num 3, pp 689-694, issn 0947-8396, 6 p.Article

Recent development of gallium oxide thin film on GaNHOOI SHY OON; KUAN YEW CHEONG.Materials science in semiconductor processing. 2013, Vol 16, Num 5, pp 1217-1231, issn 1369-8001, 15 p.Article

Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistorsFAHEM, Zied; BAUHOFER, Wolfgang.Microelectronic engineering. 2013, Vol 105, pp 74-76, issn 0167-9317, 3 p.Article

Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structureJASIŃSKI, Jakub; MAZURAK, Andrzej; MAJKUSIAK, Bogdan et al.Microelectronic engineering. 2013, Vol 109, pp 1-4, issn 0167-9317, 4 p.Article

The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy₂O₃/Si MIS nanolaminated structuresJUAN, P. C; LIU, C. H; LIN, C. L et al.Microelectronic engineering. 2013, Vol 109, pp 172-176, issn 0167-9317, 5 p.Article

Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectricCHU, L. K; CHIANG, T. H; LIN, T. D et al.Microelectronic engineering. 2012, Vol 91, pp 89-92, issn 0167-9317, 4 p.Article

Plasma atomic layer deposited TiN metal gate for three dimensional device applications: Deposition temperature, capping metal and post annealingCHAN HEO, Seung; CHOI, Changhwan.Microelectronic engineering. 2012, Vol 94, pp 11-13, issn 0167-9317, 3 p.Article

A resonant half bridge driver with novel common mode rejection technique implemented in 1.0 μm high voltage (650 V) DIMOS processSONG, Ki-Nam; KIM, Hyoung-Woo; KIM, Ki-Hyun et al.Microelectronics journal. 2011, Vol 42, Num 1, pp 74-81, issn 0959-8324, 8 p.Article

Electrical evaluation of Cu contamination behavior at the backside surface of a thinned wafer by transient capacitance measurementLEE, K.-W; BEA, J.-C; FUKUSHIMA, T et al.Semiconductor science and technology. 2011, Vol 26, Num 2, issn 0268-1242, 025007.1-025007.4Article

GaAs metal―oxide―semiconductor device with titanium dioxide as dielectric layer: effect of oxide thickness on the device performanceKUNDU, Souvik; SANDIP KUMAR ROY; BANERJI, P et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 15, issn 0022-3727, 155104.1-155104.6Article

Orientation growth and electrical properties of ZnO/BaTiO₃ heterostructures on silicon substrates by chemical solution depositionWEI, X. H; YUE, M. Q; ZHU, J et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 12, issn 0022-3727, 125304.1-125304.5Article

The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structureMICZEK, Marcin; BIDZINSKI, Piotr; ADAMOWICZ, Bogusława et al.Solid state communications. 2011, Vol 151, Num 11, pp 830-833, issn 0038-1098, 4 p.Article

⁶⁰Co gamma irradiation effects on electrical characteristics of Al/Y₂O₃/n-Si/Al capacitorsTA, Minh-Tri; BRIAND, David; BOUDART, Bertrand et al.Microelectronic engineering. 2010, Vol 87, Num 11, pp 2158-2162, issn 0167-9317, 5 p.Article

Stack engineering of low-temperature-processing Al₂O₃ dielectrics prepared by nitric acid oxidation for MOS structureCHEN, Ching-Hang; HWU, Jenn-Gwo.Microelectronic engineering. 2010, Vol 87, Num 4, pp 686-689, issn 0167-9317, 4 p.Article

Sm₂O₃ gate dielectric on Si substrateWEN CHIAO CHIN; KUAN YEW CHEONG; HASSAN, Zainuriah et al.Materials science in semiconductor processing. 2010, Vol 13, Num 5-6, pp 303-314, issn 1369-8001, 12 p.Article

In situ anti-oxidation treatment in GaAs MOVPE by as desorption and passivation with AlPTERADA, Yuki; SHIMOGAKI, Yukihiro; NAKANO, Yoshiaki et al.Journal of crystal growth. 2010, Vol 312, Num 8, pp 1359-1363, issn 0022-0248, 5 p.Conference Paper

Selective oxidation of poly-Si with embedded Ge nanocrystals in Si/SiO2/Ge(NCs)/poly-Si structure for memory device fabricationSTEPINA, N. P; KIRIENKO, V. V; DVURECHENSKII, A. V et al.Semiconductor science and technology. 2009, Vol 24, Num 2, issn 0268-1242, 025015.1-025015.4Article

The effect of deposition temperature and chamber pressure on the electrical and physical properties of the MgTi0₃ thin filmsCHEN, Yuan-Bin; HUANG, Cheng-Liang; LIN, Shih-Hung et al.Journal of alloys and compounds. 2009, Vol 480, Num 2, pp 897-902, issn 0925-8388, 6 p.Article

Distributions of barrier heights, difference of effective contact potential, and local values of flat-band voltage in Al-SiO₂-Si and poly-Si-SiO₂-Si structuresPRZEWLOCKI, H. M; KUDLA, A; PISKORSKI, K et al.Thin solid films. 2008, Vol 516, Num 12, pp 4184-4189, issn 0040-6090, 6 p.Article

Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurementOZDEMIR, Orhan; ANUTGAN, Mustafa; ALIYEVA-ANUTGAN, Tamila et al.Semiconductor science and technology. 2008, Vol 23, Num 2, issn 0268-1242, 025006.1-025006.8Article

Low angle forward reflected neutral beam source and its applications : Neutral Beam ProcessesPARK, B. J; KIM, S. W; YEOM, G. Y et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 2, issn 0022-3727, 024005.1-024005.13Article