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Electrical transport properties of polycrystalline CVD graphene on SiO2/Si substrateKUMARI, Anita; PRASAD, Neetu; BHATNAGAR, P. K et al.Diamond and related materials. 2014, Vol 45, pp 28-33, issn 0925-9635, 6 p.Article
Interaction of microwave radiation with the high mobility two-dimensional electron system in GaAs/AlGaAs heterostructuresRAMANAYAKA, A. N; TIANYU YE; LIU, H.-C et al.Physica. B, Condensed matter. 2014, Vol 453, pp 43-48, issn 0921-4526, 6 p.Conference Paper
Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin filmsLIU, P; CHEN, T. P; LIU, Z et al.Thin solid films. 2013, Vol 545, pp 533-536, issn 0040-6090, 4 p.Article
Effect of growth interruption on the crystalline quality and electrical properties of Ga-doped ZnO thin film deposited on quartz substrate by magnetron sputteringLEE, Geun-Hyoung.Thin solid films. 2013, Vol 534, pp 282-285, issn 0040-6090, 4 p.Article
Temperature dependence of electrical properties of Ga-doped ZnO films deposited by ion plating with DC arc dischargeTERASAKO, T; SONG, H; MAKINO, H et al.Thin solid films. 2013, Vol 528, pp 19-25, issn 0040-6090, 7 p.Conference Paper
Insulator, semiclassical oscillations and quantum Hall liquids at low magnetic fieldsLO, Shun-Tsung; WANG, Yi-Ting; CHEN, J. C et al.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 40, issn 0953-8984, 405601.1-405601.7Article
Anomalous Hall effect and electron transport in ferromagnetic MnBi filmsKHAREL, P; SELLMYER, D. J.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 42, issn 0953-8984, 426001.1-426601.5Article
Electrical and thermal transport properties of electrically stressed Bi―Sb―Te nanocrystalline thin filmsLIAO, Chien-Neng; SU, Xiao-Wei; LIOU, Kuen-Ming et al.Thin solid films. 2011, Vol 519, Num 13, pp 4394-4399, issn 0040-6090, 6 p.Article
Interpretation of transport measurements in ZnO-thin filmsPETUKHOV, Vladimir; STOEMENOS, John; ROTHMAN, Johan et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 1, pp 161-168, issn 0947-8396, 8 p.Article
Changes in electrical and optical properties of polycrystalline Ga-doped ZnO thin films due to thermal desorption of zincMAKINO, Hisao; SATO, Yasushi; YAMAMOTO, Naoki et al.Thin solid films. 2011, Vol 520, Num 5, pp 1407-1410, issn 0040-6090, 4 p.Conference Paper
Charge injection, transport and localization in rubreneBURKE, Franklyn; STAMENOV, Plamen; COEY, J. M. D et al.Synthetic metals. 2011, Vol 161, Num 7-8, pp 563-569, issn 0379-6779, 7 p.Conference Paper
Preparation of Al-doped ZnO transparent electrodes suitable for thin-film solar cell applications by various types of magnetron sputtering depositionsNOMOTO, Jun-Ichi; HIRANO, Tomoyasu; MIYATA, Toshihiro et al.Thin solid films. 2011, Vol 520, Num 5, pp 1400-1406, issn 0040-6090, 7 p.Conference Paper
Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulatorsJANG, Kyungsoo; PARK, Hyeongsik; PARK, Seungman et al.Thin solid films. 2010, Vol 518, Num 10, pp 2808-2811, issn 0040-6090, 4 p.Article
Effect of Post-Deposition Processing on ZnO Thin Films and DevicesTINGFANG YEN; HAUNGS, Alan; SUNG JIN et al.Journal of electronic materials. 2010, Vol 39, Num 5, pp 568-572, issn 0361-5235, 5 p.Article
Effect of organic-buffer-layer on electrical property and environmental reliability of Ga-doped ZnO films prepared by RF plasma assisted DC magnetron sputtering on plastic substrateHINOKI, Toshio; KYUHARA, Chika; AGURA, Hideaki et al.Thin solid films. 2010, Vol 519, Num 5, pp 1525-1529, issn 0040-6090, 5 p.Conference Paper
Structural and magnetotransport properties of Bi thin films grown by thermal evaporationMARCANO, N; SANGIAO, S; DE TERESA, J. M et al.Journal of magnetism and magnetic materials. 2010, Vol 322, Num 9-12, pp 1460-1463, issn 0304-8853, 4 p.Conference Paper
Highly conductive, undoped ZnO thin films deposited by electron-cyclotron-resonance plasma sputtering on silica glass substrateAKAZAWA, Housei.Thin solid films. 2009, Vol 518, Num 1, pp 22-26, issn 0040-6090, 5 p.Article
Transport and magnetotransport properties of cold-pressed CrO2 powder, prepared by hydrothermal synthesisBELEVTSEV, B. I; DALAKOVA, N. V; OSMOLOWSKY, M. G et al.Journal of alloys and compounds. 2009, Vol 479, Num 1-2, pp 11-16, issn 0925-8388, 6 p.Article
Electrical properties of a B doped layer in diamond formed by hot B implantation and high-temperature annealingTSUBOUCHI, Nobuteru; OGURA, M; MIZUOCH, N et al.Diamond and related materials. 2009, Vol 18, Num 2-3, pp 128-131, issn 0925-9635, 4 p.Conference Paper
Numerical and analytic results for the macroscopic magneto-transport of three-dimensional periodic compositesSTRELNIKER, Yakov M; BERGMAN, David J.Journal of magnetism and magnetic materials. 2009, Vol 321, Num 7, pp 814-817, issn 0304-8853, 4 p.Conference Paper
Magnetotransport in the amorphous carbon films near the metal-insulator transitionPRASAD, Vishnubhotla.Solid state communications. 2008, Vol 145, Num 4, pp 186-191, issn 0038-1098, 6 p.Article
Control of carrier concentration and surface flattening of CuGaO2 epitaxial films for a p-channel transparent transistorMINE, Takashi; YANAGI, Hiroshi; NOMURA, Kenji et al.Thin solid films. 2008, Vol 516, Num 17, pp 5790-5794, issn 0040-6090, 5 p.Conference Paper
Manipulation of an unusual anomalous Hall effect in Ga1-xMnxSb random alloysEGINLIGIL, Mustafa; KIM, Gibum; YOON, Youngsoo et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 2104-2106, issn 1386-9477, 3 p.Conference Paper
Donor-like defects in ZnO substrate materials and ZnO thin films : ZnO and Related CompoundsVON WENCKSTERN, H; BRANDT, M; SCHMIDT, H et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 88, Num 1, pp 135-139, issn 0947-8396, 5 p.Article
Weak localization and electron-electron interaction effects in indium zinc oxide filmsSHINOZAKI, Bunju; MAKISE, Kazumasa; SHIMANE, Yukio et al.Journal of the Physical Society of Japan. 2007, Vol 76, Num 7, issn 0031-9015, 074718.1-074718.6Article