Optical and electrical characteristics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy : Indium Nitride and Related AlloysCHAI, Jessica H; SONG, Young-Wook; REEVES, Roger J et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 95-99, issn 1862-6300, 5 p.Article

Critical issues for interfaces to p-type SiC and GaN in power devicesROCCAFORTE, F; FRAZZETTO, A; GRECO, G et al.Applied surface science. 2012, Vol 258, Num 21, pp 8324-8333, issn 0169-4332, 10 p.Conference Paper

Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour depositionCHUNG, S. J; SENTHIL KUMAR, M; LEE, Y. S et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 18, issn 0022-3727, 185101.1-185101.4Article

Low-temperature transport properties of Ta_xN thin films (0.72 ≤ x ≤ 0.83)OCKO, Miroslav; ZONJA, Sanja; NELSON, G. L et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 44, issn 0022-3727, 445405.1-445405.12Article

High-k Al₂O₃ MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafersAKAZAWA, M; HASEGAWA, H.Applied surface science. 2010, Vol 256, Num 19, pp 5708-5713, issn 0169-4332, 6 p.Conference Paper

Electrical conduction properties of Si δ-doped GaAs grown by MBEYILDIZ, A; LISESIVDIN, S. B; ALTUNTAS, H et al.Physica. B, Condensed matter. 2009, Vol 404, Num 21, pp 4202-4206, issn 0921-4526, 5 p.Article

Suppression of indium droplet formation by adding CC1₄ during metalorganic chemical vapor deposition growth of InN filmsWANG, H; WANG, L. L; ZHANG, S. M et al.Semiconductor science and technology. 2009, Vol 24, Num 7, issn 0268-1242, 075004.1-075004.4Article

Deep-level studies in GaN layers grown by epitaxial lateral overgrowthLEE, In-Hwan; POLYAKOV, A. Y; SMIRNOV, N. B et al.Thin solid films. 2008, Vol 516, Num 8, pp 2035-2040, issn 0040-6090, 6 p.Article

Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVDYANG, X. L; CHEN, Z. T; WANG, C. D et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 12, issn 0022-3727, 125002.1-125002.5Article

Electrical transport at a isotype type II heterojunctions in the system of GaSb-GaInAsSbAHMETOGLU, Muhitdin.Thin solid films. 2008, Vol 516, Num 6, pp 1227-1231, issn 0040-6090, 5 p.Article

Synthesis, characterization of chemically deposited indium selenide thin films at room temperatureASABE, M. R; CHATE, P. A; DELEKAR, S. D et al.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 1, pp 249-254, issn 0022-3697, 6 p.Article

The effect of rf power on the growth of InN films by modified activated reactive evaporationBIJU, Kuyyadi P; JAIN, Mahaveer K.Applied surface science. 2008, Vol 254, Num 22, pp 7259-7265, issn 0169-4332, 7 p.Article

Effect of MBE Growth Conditions on Multiple Electron Transport in InNFEHLBERG, Tamara B; GALLINAT, Chad S; UMANA-MEMBRENO, Gilberto A et al.Journal of electronic materials. 2008, Vol 37, Num 5, pp 593-596, issn 0361-5235, 4 p.Article

Effect of Anodic Oxidation on the Characteristics of Lattice-Matched AllnN/GaN HeterostructuresPIETZKA, C; DENISENKO, A; ALOMARI, M et al.Journal of electronic materials. 2008, Vol 37, Num 5, pp 616-623, issn 0361-5235, 8 p.Article

Effect of external field on bond energy and activation barrier for surface diffusionSENGUPTA, Debasis.Journal of crystal growth. 2006, Vol 286, Num 1, pp 91-95, issn 0022-0248, 5 p.Article

Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour depositionHONGBO YU; STRUPINSKI, Wlodek; BUTUN, Serkan et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 5, pp 868-873, issn 1862-6300, 6 p.Article

Structure and composition of chemically prepared and vacuum annealed InSb(0 0 1) surfacesTERESHCHENKO, O. E.Applied surface science. 2006, Vol 252, Num 21, pp 7684-7690, issn 0169-4332, 7 p.Conference Paper

Sputter-deposited metal contacts for n-type GaNHALL, H. P; AWAAH, M. A; DAS, K et al.Semiconductor science and technology. 2004, Vol 19, Num 2, pp 176-182, issn 0268-1242, 7 p.Article

Suppression of Dyakonov-Perel spin relaxation in high-mobility n-GaAsDZHIOEV, R. I; KAVOKIN, K. V; KORENEV, V. L et al.Physical review letters. 2004, Vol 93, Num 21, pp 216402.1-216402.4, issn 0031-9007Article

Employment of a GaN buffer in the OMVPE growth of InN on sapphire substratesYAMAMOTO, A; IMAI, N; SUGITA, K et al.Journal of crystal growth. 2004, Vol 261, Num 2-3, pp 271-274, issn 0022-0248, 4 p.Conference Paper

Equilibrium and non-equilibrium 1/f noise in AlGaN/GaN TLM structuresVITUSEVICH, S. A; DANYLYUK, S. V; PETRYCHUK, M. V et al.Applied surface science. 2004, Vol 238, Num 1-4, pp 143-146, issn 0169-4332, 4 p.Conference Paper

Simulation of GaN and InGaN p-i-n and n-i-n photo-devicesPOOCHINDA, Kunakorn; CHEN, Tai-Chang; STOEBE, Thomas G et al.Journal of crystal growth. 2004, Vol 261, Num 2-3, pp 336-340, issn 0022-0248, 5 p.Conference Paper

Defects and localized states in dilute GaAs1-xNx solid solutions prepared by molecular-beam epitaxyPOLYAKOV, A. Y; SMIRNOV, N. B; GOVORKOV, A. V et al.Philosophical magazine (2003. Print). 2003, Vol 83, Num 21, pp 2531-2544, issn 1478-6435, 14 p.Article

Photoacoustic measurement of transport properties in doped GaAs epitaxial layersGEORGE, Sajan D; RADHAKRISHNAN, Dilna S. P; VALLABHAN, C. P. G et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 2, pp 416-421, issn 0031-8965, 6 p.Article

Effect of Cl₂ plasma treatment on metal contacts to n-type and p-type GaNHO WON JANG; LEE, Jong-Lam.Journal of the Electrochemical Society. 2003, Vol 150, Num 9, pp G513-G519, issn 0013-4651Article