Entangling Macroscopic Diamonds at Room TemperatureLEE, K. C; SPRAGUE, M. R; JAKSCH, D et al.Science (Washington, D.C.). 2011, Vol 334, Num 6060, pp 1253-1256, issn 0036-8075, 4 p.Article

Optical characterization of nanocarbon phases in detonation soot and shocked graphitePENGWAN CHEN; FENGLEI HUANG; SHOURONG YUN et al.Diamond and related materials. 2006, Vol 15, Num 9, pp 1400-1404, issn 0925-9635, 5 p.Article

Effect of hydrogen on the low-temperature growth of polycrystalline silicon film deposited by SiCl₄/H₂RUI HUANG; XUANYING LIN; WENYONG HUANG et al.Thin solid films. 2006, Vol 513, Num 1-2, pp 380-384, issn 0040-6090, 5 p.Article

Effects of synthesis time for synthesizing single-walled carbon nanotubes over Mo-Fe-MgO catalyst and suggested growth mechanismZHIQIANG NIU; YAN FANG.Journal of crystal growth. 2006, Vol 297, Num 1, pp 228-233, issn 0022-0248, 6 p.Article

Interpretation of the Raman spectra of ultrananocrystalline diamondBIRRELL, James; GERBI, J. E; AUCIELLO, O et al.Diamond and related materials. 2005, Vol 14, Num 1, pp 86-92, issn 0925-9635, 7 p.Article

Effect of power density on the structure properties of microcrystalline silicon film prepared by high-density low-ion-energy microwave plasmaCHUAN JIE ZHONG; TANAKA, Hiroaki; SUGAWA, Shigetoshi et al.Thin solid films. 2005, Vol 493, Num 1-2, pp 54-59, issn 0040-6090, 6 p.Article

Functionalization of single-walled carbon nanotubes with conducting polymers evidenced by Raman and FTIR spectroscopyLEFRANT, S; BAIBARAC, M; BALTOG, I et al.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 867-872, issn 0925-9635, 6 p.Conference Paper

An application of Raman spectroscopy on the measurement of residual stress in porous siliconYILAN KANG; YU QIU; ZHENKUN LEI et al.Optics and lasers in engineering. 2005, Vol 43, Num 8, pp 847-855, issn 0143-8166, 9 p.Conference Paper

Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation : Femtosecond and attosecond phenomenaCROUCH, C. H; CAREY, J. E; SHEN, M et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 79, Num 7, pp 1635-1641, issn 0947-8396, 7 p.Article

Non-destructive determination of the boron concentration of heavily doped metallic diamond thin films from Raman spectroscopyBERNARD, M; DENEUVILLE, A; MURET, P et al.Diamond and related materials. 2004, Vol 13, Num 2, pp 282-286, issn 0925-9635, 5 p.Conference Paper

The 2828 cm^-1 C-H related IR vibration in CVD diamondTANG, C. J; NEVES, A. J; RINO, L et al.Diamond and related materials. 2004, Vol 13, Num 4-8, pp 958-964, issn 0925-9635, 7 p.Conference Paper

Absorption spectra of hydrogen in 13C diamond produced by high-pressure, high-temperature synthesisDE WEERDT, Filip; PAL'YANOV, Yuri N; COLLINS, Alan T et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 19, pp 3163-3170, issn 0953-8984, 8 p.Article

The effect of excimer laser etching on thin film diamondCHAN, Simon S. M; WHITFIELD, Michael D; JACKMAN, Richard B et al.Semiconductor science and technology. 2003, Vol 18, Num 3, pp S47-S58, issn 0268-1242Article

Structure and vibrational modes of sulfur around the λ-transition and the glass-transitionKALAMPOUNIAS, A. G; KASTRISSIOS, D. Th; YANNOPOULOS, S. N et al.Journal of non-crystalline solids. 2003, Vol 326-27, Num 1, pp 115-119, issn 0022-3093, 5 p.Conference Paper

First-principles studies of solid molecular halogens under pressure: metallization pressures, Raman-active A_g modes and scaling relationsMUKOSE, K; FUKANO, R; MATSUO, H et al.Solid state communications. 2002, Vol 123, Num 10, pp 451-456, issn 0038-1098Article

Effects of Ar gas dilution in methane plasma on the properties of diamond-like carbon filmsCHAKRABARTI, K; KIM, J. B; WILSON, J. I. B et al.Physica status solidi. A. Applied research. 2002, Vol 194, Num 1, pp 112-117, issn 0031-8965, 6 p.Article

Raman investigation of orthorhombic M^IIGa₂(S, Se)₄ compoundsCHARTIER, Céline; JABBAROV, Rasim; JOUANNE, Michel et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 49, pp 13693-13703, issn 0953-8984, 11 p.Article

SERS studies on single-walled carbon nanotubes submitted to chemical transformation with sulfuric acidLEFRANT, S; BALTOG, I; BAIBARAC, M et al.Carbon (New York, NY). 2002, Vol 40, Num 12, pp 2201-2211, issn 0008-6223, 11 p.Article

Doping dependence of the electronic Raman spectra in cupratesVENTURINI, F; OPEL, M; HACKL, R et al.The Journal of physics and chemistry of solids. 2002, Vol 63, Num 12, pp 2345-2348, issn 0022-3697, 4 p.Conference Paper

A joint macro-/micro- Raman investigation of the diamond lineshape in CVD films : the influence of texturing and stressDONATO, M. G; FAGGIO, G; MARINELLI, M et al.Diamond and related materials. 2001, Vol 10, Num 8, pp 1535-1543, issn 0925-9635Article

Application of FTIR phase-modulated ellipsometry to the characterisation of thin films on surface-enhanced IR absorption active substratesGARCIA-CAUREL, E; BERTRAN, E; CANILLAS, A et al.Thin solid films. 2001, Vol 398-99, Num 1, pp 99-103, issn 0040-6090Conference Paper

Defects agglomeration in the vicinity of hydrogen-related vacancy-type complexes in proton-implanted siliconTOKMOLDIN, S. Zh; MUKASHEV, B. N.Physica. B, Condensed matter. 2001, Vol 308-10, pp 167-170, issn 0921-4526Conference Paper

Valence force field analysis on nitrogen in siliconHARADA, H; OHKUBO, I; MIKAYAMA, T et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 244-247, issn 0921-4526Conference Paper

Spatially and time-resolved infrared absorption for optical and electrical characterization of indirect band gap semiconductorsGRIVICKAS, V; GALECKAS, A; BIKBAJEVAS, V et al.Thin solid films. 2000, Vol 364, Num 1-2, pp 181-185, issn 0040-6090Conference Paper

Spectral hole-burning study of radiation-induced defects in diamondSILDOS, I; OSVET, A.Physica status solidi. A. Applied research. 1999, Vol 172, Num 1, pp 15-24, issn 0031-8965Article