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Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperatureVAZQUEZ-CORTAS, D; SHIMOMURA, S; LOPEZ-LOPEZ, M et al.Journal of crystal growth. 2012, Vol 347, Num 1, pp 77-81, issn 0022-0248, 5 p.Article

Photoluminescence properties of Er-doped AlN films prepared by magnetron sputteringRINNERT, H; HUSSAIN, S. S; BRIEN, V et al.Journal of luminescence. 2012, Vol 132, Num 9, pp 2367-2370, issn 0022-2313, 4 p.Article

Two-source coevaporation technique for synthesis of indium phosphide films with controlled compositionGAYEN, R. N; HUSSAIN, S; GHOSH, D et al.Journal of alloys and compounds. 2012, Vol 531, pp 34-40, issn 0925-8388, 7 p.Article

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Carbon-tuned cathodoluminescence of semi-insulating GaNKAKANAKOVA-GEORGIEVA, A; FORSBERG, U; JANZEN, E et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 9, pp 2182-2185, issn 1862-6300, 4 p.Article

Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase _epitaxyCHINE, Z; FITOURI, H; ZAIED, I et al.Journal of crystal growth. 2011, Vol 330, Num 1, pp 35-38, issn 0022-0248, 4 p.Article

N incorporation and optical properties of GaAsN epilayers on (311)A/B GaAs substratesXIUXUN HAN; SUZUKI, Hidetoshi; LEE, Jong-Han et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 1, issn 0022-3727, 015402.1-015402.5Article

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substratesMONEMAR, Bo; PASKOV, Plamen; ZHAOXIA BI et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1532-1534, issn 1862-6300, 3 p.Article

Temperature-dependent photoluminescence of GaN grown on β-Si₃N₄/Si (1 1 1) by plasma-assisted MBEKUMAR, Mahesh; RAJPALKE, Mohana K; ROUL, Basanta et al.Journal of luminescence. 2011, Vol 131, Num 4, pp 614-619, issn 0022-2313, 6 p.Article

Tip-enhanced photoluminescence mapping of InGaN thin filmKATAYAMA, K; OGAWA, Y; MINAMI, F et al.Physica. E, low-dimentional systems and nanostructures. 2011, Vol 43, Num 3, pp 808-810, issn 1386-9477, 3 p.Article

Growth of semiipolar (1013) InN on m-plane sapphire using MOVPEDINH, Duc V; PRISTOVSEK, M; KREMZOW, R et al.Physica status solidi. Rapid research letters (Print). 2010, Vol 4, Num 5-6, pp 127-129, issn 1862-6254, 3 p.Article

Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substratesKOBAYASHI, Atsushi; SHIMOMOTO, Kazuma; OHTA, Jitsuo et al.Physica status solidi. Rapid research letters (Print). 2010, Vol 4, Num 8-9, pp 188-190, issn 1862-6254, 3 p.Article

Resonant enhancement of the transversal Kerr effect in the InMnAs layersGAN'SHINA, E. A; GOLIK, L. L; VINOGRADOV, A. N et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 39, issn 0953-8984, 396002.1-3960002.9Article

p-polarized infrared attenuated total reflection study of InN thin films grown on Si(111) substrateNO, S. S; LEE, S. C; OOI, P. K et al.Physica status solidi. Rapid research letters (Print). 2010, Vol 4, Num 8-9, pp 191-193, issn 1862-6254, 3 p.Article

Optical polarization anisotropy of nonpolar InN epilayersWANG, K; YAMAGUCHI, T; TAKEDA, A et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 6, pp 1356-1360, issn 1862-6300, 5 p.Article

Recent advances and challenges for successfu p-type control of InN films with Mg acceptor doping by molecular beam epitaxyYOSHIKAWA, Akihiko; XINQIANG WANG; ISHITANI, Yoshihiro et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 5, pp 1011-1023, issn 1862-6300, 13 p.Conference Paper

Cathodoluminescence study of undoped GaN films : Experiment and calculationFERID BEN NASR; MATOUSSI, Adel; SALH, Roushdey et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 3, pp 454-459, issn 1386-9477, 6 p.Article

Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAsDANILOV, Yu A; KUDRIN, A. V; SOBOLEV, N A et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 3, issn 0022-3727, 035006.1-035006.5Article

Magneto-optical and micromagnetic simulation study of the current-driven domain wall motion in ferromagnetic (Ga,Mn)AsWANG, K. Y; IRVINE, A. C; CAMPION, R. P et al.Journal of magnetism and magnetic materials. 2009, Vol 321, Num 8, pp 971-973, issn 0304-8853, 3 p.Article

Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVDARSLAN, Engin; OZTURK, Mustafa K; TEKE, Ali et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 15, issn 0022-3727, 155317.1-155317.10Article

Effects of different ions implantation on yellow luminescence from GaNYOU, W; ZHANG, X. D; ZHANG, L. M et al.Physica. B, Condensed matter. 2008, Vol 403, Num 17, pp 2666-2670, issn 0921-4526, 5 p.Article

Optical investigation of ferromagnetic Gaj_1-xMn_xN layers grown on sapphire (0001) substratesYOON, I. T; MYOUNG, J. M.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 9, pp 3009-3013, issn 1386-9477, 5 p.Article