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Phonon localization in cubic GaN/AlN superlatticesRODRIGUES, A. D; DE GODOY, M. P. F; MIETZE, C et al.Solid state communications. 2014, Vol 186, pp 18-22, issn 0038-1098, 5 p.Article
Formation and optical properties of silver superlattice using hydrazine hydrate as reducing agentDANHUI ZHANG; XIAOHENG LIU; XIN WANG et al.Microsystem technologies. 2011, Vol 17, Num 8, pp 1293-1299, issn 0946-7076, 7 p.Article
Stranski―Krastanow growth of multilayer In(Ga)As/GaAs QDs on Germanium substrateBANERJEE, S; HALDER, N; CHAKRABARTI, S et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 99, Num 4, pp 791-795, issn 0947-8396, 5 p.Article
Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescenceSMITH, Leigh M; JACKSON, Howard E; YARRISON-RICE, Jan M et al.Semiconductor science and technology. 2010, Vol 25, Num 2, issn 0268-1242, 024010.1-024010.13Article
Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorodsBI ZHOU; PAN, S. W; RUI CHEN et al.Solid state communications. 2009, Vol 149, Num 43-44, pp 1897-1901, issn 0038-1098, 5 p.Article
Defects in nanothin crystalline layers and multilayer structures formed of themGONCHAROVA, Olga.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5185-5188, issn 0921-4526, 4 p.Conference Paper
CdS/ZnS core-shell nanoparticles in arachidic acid LB filmsMANDAL, P; SRINIVASA, R. S; TALWAR, S. S et al.Applied surface science. 2008, Vol 254, Num 16, pp 5028-5033, issn 0169-4332, 6 p.Article
Influence of ZrO2 in HfO2 on reflectance of HfO2/SiO2 multilayer at 248 nm prepared by electron-beam evaporationJINGMEI YUAN; LEI YUAN; HONGBO HE et al.Applied surface science. 2008, Vol 254, Num 15, pp 4864-4867, issn 0169-4332, 4 p.Article
Optical properties of zinc oxide ultrathin hybrid films on silicon wafer prepared by layer-by-layer methodSEBÖK, Daniel; SZENDREI, Krisztina; SZABO, Tamas et al.Thin solid films. 2008, Vol 516, Num 10, pp 3009-3014, issn 0040-6090, 6 p.Article
White light generation from In-rich InAlGaN/InGaN heterostructuresNAGARAJAN, S; LEE, Y. S; SENTHIL KUMAR, M et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 1, issn 0022-3727, 012001.1-012001.4Article
High sensitivity of Franz-Keldysh oscillations in photoreflectance spectra for probing morphology in AlxGa1-xN/GaN heterostructuresTAKEUCHI, H; YAMAMOTO, Y; KAMO, Y et al.EPJ. Applied physics (Print). 2007, Vol 37, Num 2, pp 119-122, issn 1286-0042, 4 p.Article
Optical and structural properties of MgZnO/ZnO hetero- and double heterostructures grown by pulsed laser deposition : ZnO and Related CompoundsHEITSCH, S; BENNDORF, G; ZIMMERMANN, G et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 88, Num 1, pp 99-104, issn 0947-8396, 6 p.Article
Electron scattering between X and L indirect valleys in type-I GaAs/AlAs semiconductor superlatticesHOSODA, M; NOHGI, J; OHTANI, N et al.Physical review B. Condensed matter and materials physics. 2006, Vol 72, Num 3, pp 033317.1-033317.4, issn 1098-0121Article
Carrier dynamics and dispersive terahertz Bloch gain in semiconductor superlatticesHIRAKAWA, K; SEKINE, N.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 320-324, issn 1386-9477, 5 p.Conference Paper
Properties of the CdTe/InSb interface studied by optical and surface analytical techniquesFENG, Z. C; HUNG, S. Y; WEE, A. T. S et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 9, pp 2181-2185, issn 1862-6300, 5 p.Conference Paper
Studies of electro-optical properties and band alignment of InGaPN/ GaAs heterostructures by photoreflectance and photoluminescenceLIN, K. I; CHEN, K. C; WANG, T. S et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 211-214, issn 1386-9477, 4 p.Conference Paper
Exciton to two-dimensional electron-hole photoluminescence transitions driven by the quantum Hall effect in photoexcited heterojunctionsASHKINADZE, B. M; LINDER, E; COHEN, E et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 7, pp 075332.1-075332.7, issn 1098-0121Article
MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detectionRODRIGUEZ, J. B; CHRISTOL, P; CERUTTI, L et al.Journal of crystal growth. 2005, Vol 274, Num 1-2, pp 6-13, issn 0022-0248, 8 p.Article
Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3-5 μm spectral regionRODRIGUEZ, J. B; CHRISTOL, P; CHEVRIER, F et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 28, Num 2, pp 128-133, issn 1386-9477, 6 p.Article
Time-resolved photoluminescence of type-I and type-II (GaIn)As/Ga(NAs) heterostructuresHANTKE, K; HEBER, J. D; SCHLICHENMAIER, C et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 16, pp 165320.1-165320.9, issn 1098-0121Article
Ab initio and semiempirical dielectric response of superlatticesBOTTI, Silvana; VAST, Nathalie; REINING, Lucia et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 4, pp 045301.1-045301.13, issn 1098-0121Article
Optical and magnetic properties of (Ga1-xMnx)N/GaN digital ferromagnetic heterostructuresJEON, H. C; KANG, T. W; KIM, T. W et al.Solid state communications. 2004, Vol 132, Num 1, pp 63-65, issn 0038-1098, 3 p.Article
Rapid thermal annealing effects on the optical properties in strained CdTe (100)/GaAs (100) heterostructuresLEE, H. S; LEE, K. H; KIM, J. S et al.Journal of materials science. 2004, Vol 39, Num 23, pp 7115-7117, issn 0022-2461, 3 p.Article
Characterization of heterostructures containing MnS grown by MBEDAVID, L; TANG, X; BEAMSON, G et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 471-474, issn 0370-1972, 4 p.Conference Paper
Optical and electrical properties of GaN/AlN superlattices grown on Si(1 1 1) substrate by pulsed laser depositionTONG, X. L; ZHENG, Q. G; QIN, Y. X et al.Applied surface science. 2003, Vol 217, Num 1-4, pp 28-33, issn 0169-4332, 6 p.Article