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Solid phase epitaxy of silicon thin films by diode laser irradiation for photovoltaic applicationsSCHMIDT, T; HÖGER, I; GAWLIK, A et al.Thin solid films. 2012, Vol 520, Num 24, pp 7087-7092, issn 0040-6090, 6 p.Article

Transparent thin films of Bi₂WO₆, Bi₄Ti₃O₁₂ and Sr_0.75Ba_0.25Nb₂O₆WOLLMANN, P; SCHUMM, B; KASKEL, S et al.Solid state sciences. 2012, Vol 14, Num 9, pp 1378-1384, issn 1293-2558, 7 p.Article

Drive current enhancement in p-tunnel FETs by optimization of the process conditionsLEONELLI, D; VANDOOREN, A; ROOYACKERS, R et al.Solid-state electronics. 2011, Vol 65-66, pp 28-32, issn 0038-1101, 5 p.Conference Paper

Solid phase epitaxial regrowth of amorphous silicon is not affected by structural relaxationROORDA, S; LAVIGUEUR, Y.Philosophical magazine (2003. Print). 2010, Vol 90, Num 29-30, pp 3787-3794, issn 1478-6435, 8 p.Article

Optimizing the growth of CoSi₂ film with oxide-mediated CoSi₂ template by silicon cap layerXU, M; VANTOMME, A; SMEETS, D et al.Journal of crystal growth. 2009, Vol 311, Num 16, pp 4007-4010, issn 0022-0248, 4 p.Article

X-ray photoelectron spectroscopy of SPE-grown bcc-Fe, polycrystal and β-FeSi₂ phases on Si(111) surfacesHATTORI, Azusa N; HATTORI, Ken; DAIMON, Hiroshi et al.Surface and interface analysis. 2008, Vol 40, Num 6-7, pp 988-992, issn 0142-2421, 5 p.Conference Paper

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Cathodoluminescence during epitaxy in Rb-ion irradiated α-quartzGASIOREK, S; SAHOO, P. K; DHAR, S et al.Applied physics. B, Lasers and optics (Print). 2006, Vol 84, Num 1-2, pp 357-363, issn 0946-2171, 7 p.Article

Epitaxial thickening of AIC poly-Si seed layers on glass by solid phase epitaxyWIDENBORG, Per I; STRAUB, Axel; ABERLE, Armin G et al.Journal of crystal growth. 2005, Vol 276, Num 1-2, pp 19-28, issn 0022-0248, 10 p.Article

Mechanism for heteroepitaxial growth of transparent P-type semiconductor: LaCuOS by reactive solid-phase epitaxyHIRAMATSU, Hidenori; OHTA, Hiromichi; SUZUKI, Toshiyuki et al.Crystal growth & design. 2004, Vol 4, Num 2, pp 301-307, issn 1528-7483, 7 p.Article

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Deterioration of aluminum induced crystallization of sputtered silicon by film stressHSU, Ching-Ming; YU, Ming-Chang.Journal of materials science letters. 2003, Vol 22, Num 15, pp 1079-1081, issn 0261-8028, 3 p.Article

Two-layer crystallization of amorphous YMnO₃ thin films on Si (100) substratesDONG CHUL YOO; JEONG YONG LEE; IK SOO KIM et al.Journal of the American Ceramic Society. 2003, Vol 86, Num 1, pp 149-151, issn 0002-7820, 3 p.Article

Zero-mismatch temperature synthesis of NiSi₂ by a metal vapor vacuum arc ion sourceHE, Y; FENG, J. Y; LI, W. Z et al.Journal of crystal growth. 2003, Vol 254, Num 1-2, pp 70-74, issn 0022-0248, 5 p.Article

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Crystallization kinetics of Ge₄Sb₁Te₅ filmsWAMWANGI, D; NJOROGE, W. K; WUTTIG, M et al.Thin solid films. 2002, Vol 408, Num 1-2, pp 310-315, issn 0040-6090Article

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Influence of nitrogen concentration on conductivity of N-doped a-SiC:H films deposited by PECVDHURAN, J; HOTOV, I; KOBZEV, A. P et al.Vacuum. 2002, Vol 67, Num 3-4, pp 567-570, issn 0042-207X, 4 p.Conference Paper

Aluminum-induced crystallization of amorphous siliconGALL, S; MUSKE, M; SIEBER, I et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 741-745, issn 0022-3093, bConference Paper

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Crystallization of sol-gel-derived barium strontium titanate thin filmsGUST, Maria C; MOMODA, Leslie A; EVANS, Neal D et al.Journal of the American Ceramic Society. 2001, Vol 84, Num 5, pp 1087-1092, issn 0002-7820Article