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Electrical Characteristics of Al₂O₃/InSb MOSCAPs and the Effect of Postdeposition Annealing TemperaturesHAI DANG TRINH; YUEH CHIN LIN; JANG, Simon et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 5, pp 1555-1560, issn 0018-9383, 6 p.Article

Multi-Layer RF Capacitors on Flexible Substrates Utilizing Inkjet Printed Dielectric PolymersCOOK, Benjamin S; COOPER, James R; TENTZERIS, Manos M et al.IEEE microwave and wireless components letters. 2013, Vol 23, Num 7, pp 353-355, issn 1531-1309, 3 p.Article

Supercapacitors aging diagnosis using least square algorithmOUKAOUR, A; POULIQUEN, M; TALA-IGHIL, B et al.Microelectronics and reliability. 2013, Vol 53, Num 9-11, pp 1638-1642, issn 0026-2714, 5 p.Conference Paper

ZrLaO_x/ZrTiO_x/ZrLaO_x Laminate as Insulator for MIM Capacitors With High Capacitance Density and Low Quadratic Voltage Coefficient Using Canceling EffectLUN LUN CHEN; WU, Yung-Hsien; LIN, Yu-Bo et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1447-1449, issn 0741-3106, 3 p.Article

Repetitive high peak current pulsed discharge film-capacitor reliability testingDANG, H. Q. S; CORFIELD, M. R; CASTELLAZZI, A et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, pp 2301-2305, issn 0026-2714, 5 p.Conference Paper

Letter: Graphene nanoplatelets supported MnO₂ nanoparticles for electrochemical supercapacitorAIPING YU; SY, Abel; DAVIES, Aaron et al.Synthetic metals. 2011, Vol 161, Num 17-18, pp 2049-2054, issn 0379-6779, 6 p.Article

How supercapacitors reach end of life criteria during calendar life and power cycling testsCHAARI, R; BRIAT, O; DELETAGE, J. Y et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1976-1979, issn 0026-2714, 4 p.Conference Paper

Electrochemical performance of a high cation-deficiency Li₂Mn₄O₉/active carbon supercapacitor in LiNO₃ electrolyteYAN JING HAO; QIONG YU LAI; LING WANG et al.Synthetic metals. 2010, Vol 160, Num 7-8, pp 669-674, issn 0379-6779, 6 p.Article

Higher-κ titanium dioxide incorporating LaAlO₃ as dielectrics for MIM capacitorsCHENG, C. H; HSU, H. H; CHEN, P. C et al.Solid-state electronics. 2010, Vol 54, Num 6, pp 646-649, issn 0038-1101, 4 p.Article

Intrinsic and extrinsic reliability of a serial connection of capacitorsALLERS, K.-H.Microelectronics and reliability. 2010, Vol 50, Num 6, pp 881-886, issn 0026-2714, 6 p.Article

Design for manufacturing of 3D capacitorsNONGAILLARD, M; LALLEMAND, F; ALLARD, B et al.Microelectronics journal. 2010, Vol 41, Num 12, pp 845-850, issn 0959-8324, 6 p.Article

MOS capacitors with metal gate/high-k dielectrics on GaAs bulk substrateBUDHRAJA, V; WANG, X; MISRA, D et al.Journal of materials science. Materials in electronics. 2010, Vol 21, Num 12, pp 1322-1326, issn 0957-4522, 5 p.Article

Contribution of calendar ageing modes in the performances degradation of supercapacitors during power cyclingBRIAT, O; VINASSA, J.-M; BERTRAND, N et al.Microelectronics and reliability. 2010, Vol 50, Num 9-11, pp 1796-1803, issn 0026-2714, 8 p.Conference Paper

Electrochemical characteristics of hydrothermally deposited nickel hydroxide on multi-walled carbon nanotube for supercapacitor electrodeLIU, Chen-Guang; LEE, Yong-Sung; KIM, Young-Ja et al.Synthetic metals. 2009, Vol 159, Num 19-20, pp 2009-2012, issn 0379-6779, 4 p.Article

Function of glycine during solid-state reaction toward well-crystallized fine particulate barium titanateANDO, Chie; TSUZUKU, Koichiro; KOBAYASHI, Tomomi et al.Journal of materials science. Materials in electronics. 2009, Vol 20, Num 9, pp 844-850, issn 0957-4522, 7 p.Article

Influences of bottom electrode TaN on electrical characteristics for metal―HfO₂―metal capacitorsKANG, Tsung-Kuei; CHANG, Chia-Tung; LIN, Cheng-Li et al.Microelectronic engineering. 2009, Vol 86, Num 10, pp 1994-1998, issn 0167-9317, 5 p.Article

Dielectric thinning model applied to metal insulator metal capacitors with Al₂O₃ dielectricALLERS, K. H; BÖCK, J; BOGUTH, S et al.Microelectronics and reliability. 2009, Vol 49, Num 12, pp 1520-1528, issn 0026-2714, 9 p.Article

Analysis of the dynamic behavior changes of supercapacitors during calendar life test under several voltages and temperatures conditionsEL BROUJI, H; BRIAT, O; VINASSA, J.-M et al.Microelectronics and reliability. 2009, Vol 49, Num 9-11, pp 1391-1397, issn 0026-2714, 7 p.Conference Paper

Deposition of HfO₂ on InAs by atomic-layer depositionWHEELER, D; WERNERSSON, L.-E; FROBERG, L et al.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1561-1563, issn 0167-9317, 3 p.Conference Paper

Investigation on the Electric Properties of Bi_1.5ZnNb_1.5O₇ Thin Films Grown on TiN Substrate for MIM CapacitorsKYOUNG PYO HONG; CHO, Kyung-Hoon; YOUNG HUN JEONG et al.IEEE electron device letters. 2008, Vol 29, Num 4, pp 334-337, issn 0741-3106, 4 p.Article

Mechanisms for generation of oxide trapped charges in ultrathin silicon dioxide films during electrical stressSAMANTA, Piyas.Solid-state electronics. 2008, Vol 52, Num 2, pp 255-258, issn 0038-1101, 4 p.Article

Transmission Electron Microscopy Observations on the Interfacial Structures of the Pt/SrBi₂Ta₂O₉/Pt Thin-Film Capacitors Prepared by Metallo-Organic DecompositionXINHUA ZHU; DI WU; AIDONG LI et al.Journal of the American Ceramic Society. 2008, Vol 91, Num 3, pp 979-985, issn 0002-7820, 7 p.Article

MIMC reliability and electrical behavior defined by a physical layer property of the dielectricACKAERT, J; CHARAVEL, R; VLAD, A et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1553-1556, issn 0026-2714, 4 p.Conference Paper

Magnetic debris mitigation of a CO₂ laser-produced Sn plasmaUENO, Yoshifumi; SOUMAGNE, Georg; MORIYA, Masato et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69212Z.1-69212Z.10, issn 0277-786X, isbn 978-0-8194-7106-2Conference Paper